NE68533-T1在线购买

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	NE68533-T1	-	-	点击查看	点击购买

NE68533-T1概述

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN

NE68533-T1规格参数

参数名称	属性值
厂商名称	California Eastern Labs
包装说明	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW NOISE
最大集电极电流 (IC)	0.03 A
基于收集器的最大容量	0.7 pF
集电极-发射极最大电压	6 V
配置	SINGLE
最小直流电流增益 (hFE)	65
最高频带	S BAND
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	12000 MHz

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NE68533-T1相似产品对比

	NE68533-T1	2N5086	NE68519-T2	NE68518-T1	NE68530-T2	NE68539R-T1	NE68533-T2	NE68539-T1	NE68539-T2	NE68539R-T2
描述	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	PNP Silicon Epitaxial Planar Transistor	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, S Band, Silicon, NPN
厂商名称	California Eastern Labs	-	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs
包装说明	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	-	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW NOISE	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
最大集电极电流 (IC)	0.03 A	-	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
基于收集器的最大容量	0.7 pF	-	0.7 pF	0.5 pF	0.7 pF	0.5 pF	0.7 pF	0.5 pF	0.5 pF	0.5 pF
集电极-发射极最大电压	6 V	-	6 V	6 V	6 V	6 V	6 V	6 V	6 V	6 V
配置	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	65	-	65	65	65	65	65	65	65	65
最高频带	S BAND	-	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND
JESD-30 代码	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G4	R-PDSO-G3	R-PDSO-G4	R-PDSO-G3	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
元件数量	1	-	1	1	1	1	1	1	1	1
端子数量	3	-	3	4	3	4	3	4	4	4
最高工作温度	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	-	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	-	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	12000 MHz	-	12000 MHz	12000 MHz	12000 MHz	12000 MHz	12000 MHz	12000 MHz	12000 MHz	12000 MHz

NE68533-T1

NE68533-T1在线购买

NE68533-T1概述

NE68533-T1规格参数

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NE68533-T1相似产品对比

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