INCH–POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 29 March 2013.
MIL–PRF–19500/523D
29 December 2012
SUPERSEDING
MIL–PRF–19500/523C
16 March 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON
TYPES 2N6383, 2N6384, 2N6385, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL–PRF–19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power Darlington transistors.
Three levels of product assurance are provided for each device type as specified in
MIL–PRF–19500.
1.2 Physical dimensions. The device package style is TO–204AA (formerly TO–3) in accordance with
figure 1.
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
P
T
T
A
= +25°C
(1)
W
2N6383
2N6384
2N6385
6.0
6.0
6.0
T
C
= +25°C
(2)
W
100
100
100
Types
R
θ
JC
max
°C/W
1.75
1.75
1.75
V
CBO
and
V
CEO
V dc
40
60
80
V
EBO
I
B
I
C
T
J
and T
STG
V dc
5.0
5.0
5.0
A dc
0.25
0.25
0.25
A dc
10
10
10
°C
–55 to +175
–55 to +175
–55 to +175
(1) Derate linearly 34.2 mW/°C above T
A
> +25°C.
(2) Derate linearly 571 mW/°C above T
C
> +25°C.
Comments, suggestions, or questions on this document should be addressed DLA Land and Maritime ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218–3990, or emailed to
semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil.
AMSC N/A
FSC 5961
MIL–PRF–19500/523D
1.4 Primary electrical characteristics. Unless otherwise specified, T
C
= +25°C.
Limit
h
FE1
(1)
V
CE
= 3.0 V dc
I
C
= 5.0 A dc
V
CE(sat)1
(1)
I
C
= 5.0 A dc
I
B
= 10 mA dc
V dc
Minimum
Maximum
Limit
1,000
20,000
|h
fe
|
V
CE
= 5.0 V dc
I
C
= 1.0 A dc
f = 1 MHz
2.0
V
CE(sat)2
(1)
I
C
= 10 A dc
I
B
= 0.1 A dc
V dc
3.0
Pulse response (2)
V
CC
= 30 V dc
I
CC
= 5.0 A dc, I
B1
= 20 mA dc
t
on
µs
Minimum
Maximum
20
300
2.5
t
off
µs
10.0
V
BE(ON)1
(1)
V
CE
= 3.0 V dc
I
C
= 5.0 A dc
V dc
2.8
C
obo
V
CB
= 10 V dc
I
E
= 0
100 KHz < f < 1 MHz
pF
200
(1) Pulsed (see
4.5.1).
(2) See
figure 2
for pulse response circuits.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections
3, 4,
or
5
of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections
3, 4,
or
5
of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL–PRF–19500
–
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL–STD–750
–
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
https://assist.dla.mil/quicksearch
or
https://assist.dla.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111–5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL–PRF–19500/523D
FIGURE 1. Physical dimensions (TO–204AA, formerly TO–3)
3
MIL–PRF–19500/523D
Symbol
Inches
Min
CD
CH
HR
HR1
HT
LD
LL
L1
MHD
MHS
PS
PS1
S1
.151
1.177
.420
.205
.655
.250
.495
.131
.050
.038
.312
Dimensions
Millimeters
Min
Max
22.23
6.35
12.57
3.33
1.27
0.97
7.92
11.43
13.34
4.78
3.43
1.09
12.7
1.27
3.84
29.90
10.67
5.21
16.64
4.09
30.40
11.18
5.72
17.15
Notes
Max
.875
.450
.525
.188
.135
.043
.500
.050
.161
1.197
.440
.225
.675
3
4
5, 6
5
5, 6
7
8, 9
5, 8, 9
8
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Terminal 1 is the base and terminal 2 is the emitter. The collector shall be electrically connected to the
case.
3 Body contour is optional within zone defined by dimension CD.
4. Applies to both ends.
5. Applies to both terminals.
6. Dimension LD applies between L
1
and LL. Lead diameter shall not exceed twice dimension LD within
dimension L
1
. Diameter is uncontrolled in dimension L
1
.
7. Two holes.
8. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below the
seating plane. When gauge is not used, measurement shall be made at seating plane.
9. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm)
convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch
(0.03 mm) concave to .006 inch (0.15 mm) convex overall.
10. Mounting holes shall be deburred on the seating plane side.
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions (TO–204AA, formerly TO–3) – Continued.
4
MIL–PRF–19500/523D
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in
MIL–PRF–19500
and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see
4.2
and
6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in
MIL–PRF–19500
and as follows:
I
M
I
H
t
H
t
SW
–
–
–
–
The measurement current applied to forward bias the junction for measurement of V
BE
.
The collector current applied to the device under test during the heating period.
The duration of the applied heating power pulse.
Sample window time during which final V
BE
measurement is made.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL–PRF–19500
and on
figure 1
herein.
3.4.1 Lead finish. The lead finish shall be solderable in accordance with
MIL–PRF–19500, MIL–STD–750,
and
herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see
6.2).
3.4.2 Polarity. The identification of terminals of the device package shall be as shown on
figure 1.
Terminal 1
shall be connected to the base, terminal 2 shall be connected to the emitter, and the collector shall be electrically
connected to the case.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in
1.3, 1.4,
and
table I
herein.
3.6 Electrical test requirements. The electrical test requirements shall be as specified in
table I.
3.7 Marking. Marking shall be in accordance with
MIL–PRF–19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see
4.3).
Conformance inspection (see
4.4
and
tables I
and
II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with
MIL–PRF–19500,
and as
specified herein.
4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II
tests, the tests specified in
table II
herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
