SMBJ12A822
SMBJ12A822
DO-214AA(SMB)
Color Band Denotes Cathode
Device Marking:LE.
600 Watt Unidirectional Transient Voltage Suppressor
Absolute Maximum Ratings
(Note 1)
Symbol
P
PPM
I
PPM
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Peak Pulse Power Dissipation on 10/1000µs waveform
Peak Pulse Current on 10/1000µs waveform
Non-repetitive Peak Forward Surge Current superimposed on rated
load (JEDEC method)(Note 2)
Value
600
17.5
100
Units
W
A
A
Note 1) These ratings are limiting values above which serviceability of any semiconductor device may be impaired.
Note 2) Measured on 8.3ms single half-sine wave or equivalent square wave. Duty cycle=4 pulses per minute maximum.
Thermal Characteristics
Symbol
R
θJA
R
θJL
T
STG
T
J
Parameter
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Leads
Storage Temperature Range
Operating Junction Temperature
Value
100
20
-65 to +175
-65 to +150
Units
°C/W
°C/W
°C
°C
Electrical Characteristics
Symbol
V
BR
αT
V
RWM
I
R
V
C
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage at I
T
= 1.0mA
Maximum Temperature coefficient of V
BR
Reverse Stand-off Voltage
Maximum Reverse Leakage Current @V
RWM
Maximum Clamping Voltage @I
PPM
Value
13.2 – 14.3
0.084
12
5
15.6
Units
V
%/°C
V
µA
V
2002
Fairchild Semiconductor Corporation
SMBJ12A822, Rev. B
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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This datasheet contains specifications on a product
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Rev. I1
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