Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.05 A |
集电极-发射极最大电压 | 120 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 180 |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e1 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 0.2 W |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 10 |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
2SA1514KR | 2SA1579S | 2SA1514KS | 2SA1514KT146 | 2SA1579T106 | 2SA1579R | |
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描述 | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
Reach Compliance Code | compli | compli | compli | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
集电极-发射极最大电压 | 120 V | 120 V | 120 V | 120 V | 120 V | 120 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 180 | 270 | 270 | 180 | 180 | 180 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
最大功率耗散 (Abs) | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 10 | 10 | 10 | 10 | 10 | 10 |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - | SMALL OUTLINE, R-PDSO-G3 |
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