Power Bipolar Transistor, 3.5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
参数名称 | 属性值 |
厂商名称 | API Technologies |
Reach Compliance Code | compliant |
最大集电极电流 (IC) | 3.5 A |
集电极-发射极最大电压 | 500 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 30 |
JEDEC-95代码 | TO-3 |
JESD-30 代码 | O-MBFM-P2 |
元件数量 | 1 |
端子数量 | 2 |
最高工作温度 | 140 °C |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | FLANGE MOUNT |
极性/信道类型 | NPN |
功耗环境最大值 | 100 W |
最大功率耗散 (Abs) | 100 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | PIN/PEG |
端子位置 | BOTTOM |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 4 MHz |
VCEsat-Max | 0.8 V |
SPC-425 | SPC-402 | SPC-424 | SPC-401 | SPC-423 | SPC-423M | |
---|---|---|---|---|---|---|
描述 | Power Bipolar Transistor, 3.5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 3.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 3.5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 3.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 3.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
最大集电极电流 (IC) | 3.5 A | 3.5 A | 3.5 A | 2 A | 3.5 A | 3.5 A |
集电极-发射极最大电压 | 500 V | 400 V | 500 V | 400 V | 400 V | 400 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 30 | 20 | 30 | 20 | 30 | 30 |
JEDEC-95代码 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 | TO-3 |
JESD-30 代码 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 | 2 |
最高工作温度 | 140 °C | 140 °C | 140 °C | 140 °C | 140 °C | 125 °C |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
功耗环境最大值 | 100 W | 100 W | 100 W | 100 W | 100 W | 100 W |
最大功率耗散 (Abs) | 100 W | 100 W | 100 W | 100 W | 100 W | 100 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO |
端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 4 MHz | 4 MHz | 4 MHz | 4 MHz | 4 MHz | 3 MHz |
VCEsat-Max | 0.8 V | 2 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V |
厂商名称 | API Technologies | - | API Technologies | API Technologies | API Technologies | API Technologies |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved