Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFR9130J
RADIATION TOLERANT
20 AMP, 100 Volts, 90 mΩ
Avalanche Rated P-MOSFET
Features:
Rugged Trench Technology
Low ON-resistance: 60mΩ typ
Radiation tolerant: less than 0.5V typical gate
threshold shift @ TID= 100kRAD
SEU and SEGR resistant to LET 38
Avalanche rated
Hermetically Sealed Power Packaging
Low Total Gate Charge, Fast Switching
Replacement for IRF9130 types
TX, TXV, S-Level screening available
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFR9130
__
│
│
│
│
│
│
│
│
│
└
__
│
│
│
│
│
└
__
└
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Lead Options
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Package
3/
J = TO-257
Maximum Ratings
Drain – Source Voltage
Gate – Source Voltage, continuous
Gate – Source Voltage, transient
Max. Continuous Drain Current
(package limited)
Max. Avalanche Current
Max. Continuous Drain Current (Tj limited)
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25
o
C.
Symbol
V
DSS
V
GS
@ T
C
= 25ºC
@ T
C
= 100ºC
@ L= 5.0mH
@ Tj= 150ºC
@ L= 5.0mH
@ T
C
= 25ºC
I
D1
I
D2
I
AR
I
DM
E
AS
P
D
T
OP
& T
STG
R
0JC
Value
-100
±15
±25
20
15
26
26
300
75
-55 to +150
1.65
TO-257 (J)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFR9130J
Symbol
V
GS
= 0V, I
D
=0.25 mA
V
GS
= 10V, I
D
= 13A, Tj= 25
o
C
V
GS
= 10V, I
D
= 13A, Tj= 125
o
C
V
DS
= 5 V, I
D
= 250A, Tj= 25
o
C
V
DS
= 5 V, I
D
= 250A, Tj= 125
o
C
V
DS
= 5 V, I
D
= 250A, Tj= -55
o
C
V
GS
= ±15V, Tj= 25
o
C
V
GS
= ±15V, Tj= 125
o
C
V
DS
= -100V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= -100V, V
GS
= 0V, T
j
= 125
o
C
V
DS
= 10V, I
D
= 10A, T
j
= 25
o
C
V
GS
= 10V
V
DS
= 80V
I
D
= 10A
V
GS
= 10V
V
DS
= 50V
I
D
= 10A
R
G
= 10
I
F
= 10A, V
GS
= 0V
I
F
= 10A, di/dt = 100A/usec
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
BV
DSS
R
DS(on)
V
GS(th)
I
GSS
I
DSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Electrical Characteristics
3/
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
Min
-100
-
-
-2.0
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
- 115
60
100
-3.2
-2.5
-3.6
1
10
0.01
5
15
23
8.5
5
65
25
75
30
0.85
55
135
3500
300
110
-
90
-
-4.0
-
-5.0
±50
±200
10
250
-
40
-
-
100
50
150
50
1.5
85
-
4000
400
200
V
mΩ
V
nA
A
A
Mho
nC
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
nsec
V
nsec
nC
pF
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013C
DOC
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
