Si4830ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
7.5
6.5
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
D
D
D
D
LITTLE FOOTr
Plus
Schottky
Si4830DY Pin Compatible
PWM Optimized
100% R
g
Tested
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
APPLICATIONS
D
Asymmetrical Buck-Boost DC/DC Converter
I
F
(A)
2.0
D
1
V
SD
(V)
Diode Forward Voltage
0.50 V @ 1.0 A
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
Ordering Information: Si4830ADY—E3 (Lead Free)
Si4830ADY-T1—E3 (Lead Free with Tape and Reel)
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
7.5
6.0
30
1.7
2.0
1.3
−55
to 150
Steady State
Unit
V
5.7
4.6
0.9
1.1
0.7
W
_C
A
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
www.vishay.com
t
v
10 sec
Steady-State
Steady-State
Schottky
Typ
53
93
35
Symbol
R
thJA
R
thJF
Typ
52
93
35
Max
62.5
110
40
Max
62.5
110
40
Unit
_C/W
C/W
1
Si4830ADY
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED).
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V T
J
= 85_C
V
V,
On-State Drain
Current
b
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 4.5 V, I
D
= 6.5 A
V
DS
= 15 V, I
D
= 7.5 A
I
S
= 1 A V
GS
= 0 V
A,
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
0.017
0.024
19
0.75
0.47
1.2
0.5
0.022
0.030
0.8
3.0
"100
1
100
15
2000
A
W
S
V
mA
V
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Drain-Source On-State
Drain Source On State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Source Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1 7 A di/dt = 100 A/ms
1.7 A,
Ch-1
Ch-2
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
0.5
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.5 A
,
,
7
2.9
2.5
1.5
9
10
19
9
35
32
2.4
15
17
30
15
55
55
ns
W
11
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Condition
I
F
= 1.0 A
I
F
= 1.0 A, T
J
= 125_C
V
r
= 30 V
V
r
= 30 V, T
J
= 100_C
V
r
=
−30
V, T
J
= 125_C
V
r
= 10 V
Min
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
Maximum Reverse Leakage Current
g
Junction Capacitance
I
rm
C
T
mA
pF
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2
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
Si4830ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
25
I
D
−
Drain Current (A)
20
15
10
5
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
−
Gate-to-Source Voltage (V)
I
D
−
Drain Current (A)
V
GS
= 10 thru 5 V
30
4V
25
20
15
10
5
MOSFET
Transfer Characteristics
T
C
= 125_C
25_C
−55_C
On-Resistance vs. Drain Current
0.040
r
DS(on)
−
On-Resistance (
W
)
1200
Capacitance
0.030
V
GS
= 4.5 V
0.020
V
GS
= 10 V
C
−
Capacitance (pF)
960
C
iss
720
480
C
oss
240
C
rss
0.010
0.000
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 7.5 A
8
r
DS(on)
−
On-Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 7.5 A
6
4
2
0
0
3
6
9
12
15
Q
g
−
Total Gate Charge (nC)
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
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Si4830ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
10
r
DS(on)
−
On-Resistance (
W
)
I
S
−
Source Current (A)
0.06
0.05
0.04
I
D
= 7.5 A
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
MOSFET
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
1
T
J
= 25_C
0.1
0.0
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
−0.0
−0.2
−0.4
−0.6
−0.8
−50
20
Power (W)
60
100
Single Pulse Power, Junction-to-Ambient
80
40
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
Time (sec)
1
10
T
J
−
Temperature (_C)
100
Safe Operating Area, Junction-to-Foot
Limited by r
DS(on)
1 ms
10
I
D
−
Drain Current (A)
1
10 ms
100 ms
0.1
T
C
= 25_C
Single Pulse
1s
10 s
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
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Document Number: 72021
S-32621—Rev. D, 29-Dec-03
4
Si4830ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
MOSFET
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
2
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72021
S-32621—Rev. D, 29-Dec-03
www.vishay.com
5
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