®
BTA24BW/CW
BTB24BW/CW
SNUBBERLESS TRIACS
.
.
.
.
FEATURES
HIGH COMMUTATION : (dI/dt)c > 22A/ms
without snubber
HIGH SURGE CURRENT : I
TSM
= 250A
V
DRM
UP TO 800V
BTA family:
Insulated voltage = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTA/BTB24 BW/CW triac family are high per-
formance glass passivated chips technology.
The SNUBBERLESS™ concept offers suppression
of RC network and it is suitable for application
such as phase control and static switching on in-
ductive or resistive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t value
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Parameter
BTA
BTB
Tc = 75
°C
Tc = 95
°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
Tstg
Tj
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Value
25
25
260
250
312
20
100
- 40 to + 150
- 40 to + 125
260
°C
°C
°C
A2s
A/µs
Unit
A
A
A
G
A1
A2
TO220AB
(Plastic)
ITSM
I2t
dI/dt
Symbol
Parameter
BTA/BTB24-... BW/CW
600
700
700
800
800
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
600
V
August 1998 Ed : 2A
1/5
BTA/BTB24 BW/CW
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
BTA
BTB
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA
BTB
Parameter
Value
60
2.3
1.3
1.7
1.0
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IGM = 4A (tp = 20
µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
BW
IGT
VD=12V
(DC) RL=33Ω
Tj=25°C
I-II-III
MIN
MAX
VGT
VGD
IL
VD=12V
(DC) RL=33Ω
Tj=25°C
Tj=125°C
Tj=25°C
I-II-III
I-II-III
I-III
II
IH *
VTM *
IDRM
IRRM
dV/dt *
(dI/dt)c *
IT= 250mA gate open
ITM= 35A tp= 380µs
VDRM Rated
VRRM Rated
Linear slope up to VD=67%VDRM
gate open
Without snubber
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
Tj=125°C
MAX
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MIN
1000
22
60
120
75
1.5
5
3
500
13
4
50
1.3
0.2
50
80
50
mA
V
µA
mA
V/µs
A/ms
CW
2
35
V
V
mA
mA
Unit
VD=VDRM RL=3.3kΩ
IG=1.2 IGT
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
BTA/BTB24 BW/CW
ORDERING INFORMATION
Package
IT(RMS)
A
BTA
(Insulated)
25
VDRM / VRRM
V
600
700
800
BTB
(Uninsulated)
25
600
700
800
Sensitivity Specification
BW
X
X
X
X
X
X
CW
X
X
X
X
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current.
P(W)
30
α
25
20
15
α
α
α
10
180°
5
0
0
α
I
T(RMS)
(A)
5
10
15
α
α
20
25
Fig.2 : Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink +
contact. (BTA)
P(W)
Rth=0°C/W
Fig.3 : Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink +
contact.(BTB)
P(W)
Tcase (°C)
95
Rth=0°C/W
Rth=3°C/W
30
25
20
15
10
5
Tcase (°C)
75
85
30
25
20
100
Rth=2°C/W
Rth=3°C/W
105
Rth=1°C/W
95
Rth=2°C/W
15
10
5
0
0
α
110
115
120
105
Rth=1°C/W
115
α
Tamb(°C)
Tamb(°C)
0
0
20
40
60
80
100
120
140
125
20
40
60
80
100
120
140
125
3/5
BTA/BTB24 BW/CW
Fig.4 : RMS on-state current versus case temperature.
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
K=[Zth/Rth]
1.00
α
Zth(j-c)
30
25
20
15
10
5
IT(rms)(A)
BTB
BTA
0.10
Zth(j-a)
Tcase(°C)
0
0
25
50
75
100
125
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature (typical
values).
I
GT
,I
H
[Tj]/I
G
,I
H
[Tj=25°C]
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
2.5
2.0
I
GT
1.5
1.0
0.5
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
I
H
220
200
180
160
140
120
100
80
60
40
20
0
I
TSM(A)
Tj initial=25°C
F=50Hz
Number of cycles
1
10
100
1000
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : tp
≤
10ms, and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
1000
I
TSM
(A)
,
I²t(A²s)
I
TSM
Tj initial=25°C
300
100
I
TM
(A)
500
Tj=Tj max.
I²t
10
200
tp(ms)
100
1
2
5
10
Tj=25°C
Tj max.:
Vto=0.85V
Rt=16m
Ω
V
TM
(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
4/5
BTA/BTB24 BW/CW
PACKAGE MECHANICAL DATA
TO220AB Plastic
B
C
REF.
b2
L
F
I
A
l4
a1
c2
l3
l2
a2
b1
e
M
c1
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
15.20 15.90 0.598 0.625
3.50
4.20
0.137 0.165
13.00 14.00 0.511 0.551
10.00 10.40 0.393 0.409
0.61
0.88
0.024 0.034
1.23
1.32
0.048 0.051
4.40
4.60
0.173 0.181
0.49
0.70
0.019 0.027
2.40
2.72
0.094 0.107
2.40
2.70
0.094 0.106
6.20
6.60
0.244 0.259
3.75
3.85
0.147 0.151
16.40 Typ.
0.646 Typ.
2.65
2.95
0.104 0.116
1.14
1.70
0.044 0.066
1.14
1.70
0.044 0.066
2.60 Typ.
0.102 Typ.
Cooling method : C
Marking : type number
Weight : 2.1 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and re-
places all information previously supplied. STMicroelectronics products are not authorized for use as critical components
in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
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