BUP 307D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1
G
Type
BUP 307D
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1200
1200
Unit
V
Pin 2
C
Ordering Code
Q67040-A4221-A2
Pin 3
E
V
CE
I
C
Package
TO-218 AB
1200V 35A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
35
23
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
70
46
T
C
= 25 °C
T
C
= 90 °C
Diode forward current
I
F
18
T
C
= 90 °C
Pulsed diode current,
t
p
= 1 ms
I
Fpuls
108
T
C
= 25 °C
Power dissipation
P
tot
300
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Dec-02-1996
BUP 307D
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
R
thJC
R
thJC
D
≤
0.42
≤
1.25
K/W
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
2.7
3.3
3.4
4.3
-
-
6.5
3.2
3.9
-
-
V
V
GE
=
V
CE,
I
C
= 0.35 mA,
T
j
= 25 °C
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
-
V
GE
= 15 V,
I
C
= 25 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 25 A,
T
j
= 125 °C
V
GE
= 15 V,
I
C
= 42 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 42 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
0.5
mA
nA
-
100
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
Gate-emitter leakage current
I
GES
V
GE
= 25 V,
V
CE
= 0 V
AC Characteristics
Transconductance
g
fs
5.5
8
2000
160
65
-
S
pF
-
2700
240
100
V
CE
= 20 V,
I
C
= 15 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Semiconductor Group
2
Dec-02-1996
BUP 307D
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
t
d(on)
Values
typ.
max.
Unit
ns
30
45
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 33
Ω
Rise time
-
t
r
-
22
35
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 33
Ω
Turn-off delay time
t
d(off)
-
230
310
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
Ω
Fall time
t
f
-
20
28
mWs
-
1.7
-
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
Ω
Total turn-off loss energy
E
off
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 33
Ω,
T
j
= 25 °C
Free-Wheel Diode
Diode forward voltage
V
F
-
-
2.4
1.9
2.95
-
V
I
F
= 15 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 15 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
t
rr
ns
I
F
= 15 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -800 A/µs
T
j
= 25 °C
T
j
= 125 °C
Reverse recovery charge
-
-
-
100
-
150
µC
Q
rr
I
F
= 15 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -800 A/µs
T
j
= 25 °C
T
j
= 125 °C
3
-
-
1
3
1.8
5.4
Semiconductor Group
Dec-02-1996
BUP 307D
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
320
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
36
A
W
P
tot
240
I
C
28
24
200
20
160
16
120
12
80
8
4
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
40
0
0
T
C
T
C
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
t
= 7.9µs
p
10 µs
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
IGBT
A
K/W
100 µs
I
C
10
1
Z
thJC
10
-1
1 ms
D = 0.50
0.20
10 ms
10
0
10
-2
0.10
0.05
0.02
0.01
DC
10
-1
0
10
10
-3
-5
10
single pulse
10
1
10
2
10
3
V
10
-4
10
-3
10
-2
10
-1
s 10
0
V
CE
t
p
Semiconductor Group
4
Dec-02-1996
BUP 307D
Typ. output characteristics
Typ. transfer characteristics
I
C
= f
(
V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
I
C
=
f
(V
GE
)
parameter:
t
P
= 80 µs,
V
CE
= 20 V,
T
j
= 25 °C
Typ. saturation characteristics
Typ. saturation characteristics
V
CE(sat)
=
f
(V
GE
)
parameter:
T
j
= 25 °C
V
CE(sat)
=
f
(
V
GE
)
parameter:
T
j
= 125 °C
Semiconductor Group
5
Dec-02-1996
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