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HYM71V16M655HCT8-8

产品描述Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144
产品类别存储    存储   
文件大小152KB,共14页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
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HYM71V16M655HCT8-8概述

Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144

HYM71V16M655HCT8-8规格参数

参数名称属性值
厂商名称SK Hynix(海力士)
零件包装代码MODULE
包装说明DIMM, DIMM144,32
针数144
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式SINGLE BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)125 MHz
I/O 类型COMMON
JESD-30 代码R-XDMA-N144
内存密度1073741824 bit
内存集成电路类型SYNCHRONOUS DRAM MODULE
内存宽度64
功能数量1
端口数量1
端子数量144
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织16MX64
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM144,32
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
电源3.3 V
认证状态Not Qualified
刷新周期4096
自我刷新YES
最大待机电流0.016 A
最大压摆率1.6 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子形式NO LEAD
端子节距0.8 mm
端子位置DUAL

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16Mx64bits
PC100 SDRAM SO DIMM
based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V16M655HC(L)T8 Series
DESCRIPTION
The Hynix HYM71V16M655HC(L)T8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight
16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin
glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V16M655HC(L)T8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of
128Mbytes memory. The Hynix HYM71V16M655HC(L)T8 Series are fully synchronous operation referenced to the positive edge of
the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to
achieve very high bandwidth.
FEATURES
PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.155” (29.34mm) Height PCB with single sided
components
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
Programmable CAS Latency ; 2, 3 Clocks
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM71V16M655HCT8-8
HYM71V16M655HCT8-P
HYM71V16M655HCT8-S
HYM71V16M655HCLT8-8
HYM71V16M655HCLT8-P
HYM71V16M655HCLT8-S
Clock
Frequency
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
4 Banks
4K
Low Power
TSOP-II
Gold
125MHz
100MHz
100MHz
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.3/Dec. 01
2

 
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