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2SB949Q: 产品描述Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3; 产品类别分立半导体晶体管; 文件大小243KB，共3页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html

下载文档详细参数选型对比全文预览

2SB949Q概述

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3

2SB949Q规格参数

参数名称	属性值
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
外壳连接	ISOLATED
最大集电极电流 (IC)	2 A
集电极-发射极最大电压	60 V
配置	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	2000
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	PNP
最大功率耗散 (Abs)	2 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	20 MHz
Base Number Matches	1

2SB949Q相似产品对比

	2SB949Q	2SB949AP	2SB949AQ	2SB949AR	2SB949P	2SB949R
描述	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, FULL PACK-3
零件包装代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
最大集电极电流 (IC)	2 A	2 A	2 A	2 A	2 A	2 A
集电极-发射极最大电压	60 V	80 V	80 V	80 V	60 V	60 V
配置	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	2000	4000	2000	1000	4000	1000
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	2 W	2 W	2 W	2 W	2 W	2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz
Base Number Matches	1	1	1	1	1	1

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