2N2221A, 2N2221AL 2N2221AUA,
2N2221AUB, 2N2222A, 2N2222AL,
2N2222AUA, 2N2222AUB Datasheet
Radiation Hardened NPN Silicon Switching Transistor
Revision Date: 6/30/2015
The most important thing we build is trust
Features
•
•
Levels
Qualified to MIL-PRF-19500/255
JANSM-3K Rads (Si)
JAN
JANSD-10K Rads (Si)
JANSP-30K Rads (Si)
JANSL-50K Rads (Si)
JANTX
JANS
JANTXV
Applications
•
•
•
TO-18 (TO-206AA), Surface mount UA & UB Packages
JANSR-100K Rads (Si)
Switching and Linear Applications
Absolute Maximum Ratings
@ T
C
= +25 ºC (Unless Otherwise Defined)
Operating Temperature
Storage Temperature
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
R
ΘJC
Thermal Resistance
Total Power Dissipation
Parameter
Symbol
T
OP
T
STG
V
CEO
V
CBO
V
EBO
I
C
P
T
Conditions
Absolute Maximum Value
-65 ºC to 200 ºC
-65 ºC to 200 ºC
50 Vdc
75 Vdc
6.0 Vdc
800 mAdc
325 ºC/W
0.5 W
DC and VHF Amplifier Applications
Junction to Ambient
T
A
= +25 ºC
1
Document No. DS 2-10000 Rev.A, 2484
Revision Date: 6/30/2015
603-641-3800 • 888-641-SEMI (7364)
LW 15528 DATASHEET TEMPLATE
ECN 2482
www.cobham.com/metelics
2N2221A, L, UA, UB / 2N2222A, L, UA, UB
2N2221A, L, UA, UB / 2N2222A, L, UA, UB
Electrical Specifications
OFF Characteristics @ T
A
= 15 ºC (Unless Otherwise Defined)
Parameter
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
EBO1
I
EBO2
I
CES
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Radiation Hardened NPN Silicon Switching Transistor
Test Conditions
I
C
= 10 mAdc
V
EB
= 6.0 Vdc
V
EB
= 4.0 Vdc
V
CE
= 50 Vdc
V
CB
= 75 Vdc
V
CB
= 60 Vdc
Min.
Value
50
-
-
-
-
-
Typ.
Value
-
-
-
-
-
-
Max.
Value
10
10
10
10
50
-
Units
µAdc
nAdc
µAdc
nAdc
nAdc
Vdc
2N2221A, L, UA, UB / 2N2222A, L, UA, UB
Electrical Specifications
ON Characteristics
(1)
@ T
A
= 15 ºC (Unless Otherwise Defined)
Parameter
Symbol
Test Conditions
Forward Current Transfer Ratio
h
FE
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
I
C
= 0.1 mAdc
V
CE
= 10 Vdc
I
C
= 1.0 mAdc
V
CE
= 10 Vdc
I
C
= 10 mAdc
V
CE
= 10 Vdc
I
C
= 150 mAdc
V
CE
= 10 Vdc
I
C
= 500 mAdc
V
CE
= 10 Vdc
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Test Conditions
2N2221A, L,
2N2222A, L,
2N2221A, L,
2N2222A, L,
2N2221A, L,
2N2222A, L,
2N2221A, L,
2N2222A, L,
2N2221A, L,
2N2222A, L,
-
-
-
-
Part Series
UA,
UA,
UA,
UA,
UA,
UA,
UA,
UA,
UA,
UA,
UB
UB
UB
UB
UB
UB
UB
UB
UB
UB
Min.
Value
30
50
35
75
40
100
40
100
20
30
-
-
0.6
-
Typ.
Value
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Value
-
-
-
-
-
Max.
Value
-
-
150
325
-
-
120
300
-
-
0.3
1.0
1.2
2.0
Units
Vdc
Vdc
Dynamic Characteristics @ T
A
= 15 ºC (Unless Otherwise Defined)
Small-Signal Short-Circuit Forward
Current Transfer Ratio
Output Capacitance
Output Capacitance
Parameter
Symbol
h
fe
| h
fe
|
C
OBO
C
IBO
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
f = 1.0kHz
I
C
= 20 mAdc, V
CE
= 20 Vdc
f = 100MHz
V
CB
= 10 Vdc, I
E
= 0,
100 kHz ≤ f ≤ 1.0 MHz
V
CB
= 0.5 Vdc, I
E
= 0,
100 kHz ≤ f ≤ 1.0 MHz
2N2221A, L, UA, UB
2N2222A, L, UA, UB
Part Series
Min.
Value
2.5
-
-
30
50
Max.
Value
-
-
-
8.0
25
Units
pF
pF
Switching Characteristics @ T
A
= 15 ºC (Unless Otherwise Defined)
Turn-On Time
See figure 17 of MIL-PRF-19500/255
Parameter
Symbol
t
on
t
off
Test Conditions
Part Series
Min.
Value
-
-
Typ.
Value
-
-
Max.
Value
35
300
Units
ns
ns
Turn-Off Time
See Figure 18 of MIL-PRF-19500/255
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
www.cobham.com/metelics
603-641-3800 • 888-641-SEMI (7364)
LW 15528 DATASHEET TEMPLATE
ECN 2482
Document No. DS 2-10000 Rev.A, ECN 2484
Revision Date: 6/30/2015
2
2N2221A, L, UA, UB / 2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistor
TO-18 Outline
Symbol
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.170
.210
4.32
5.33
.209
.230
5.31
5.84
.10 0 TP
2 .54 TP
.016
.021
0.41
0.53
.500
.750
12.70 19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
1, 2, 9, 11, 12, 13
Note
6
7,8
7,8,13
7,8
7,8
7,8
5
3,4
3
10
6
Notes:
1
2
Dimensions are in inches.
3
4
5
Millimeters are given for general information only.
Dimension TL measured from maximum HD.
Beyond r (radius) maximum, TL shall be held for a
minimum length of .011 inch (0.28 mm).
Body contour optional within zone defined by HD, CD,
and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37
+0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at
maximum material condition (MMC) relative to tab at
MMC.
Dimension LU applies between L1 and L2. Dimension
LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
All three leads.
12 Lead 1 = emitter, lead 2 = base, lead 3 = collector.
11 In accordance with ASME Y14.5M, diameters are
equivalent to φx symbology.
13 For L suffix devices, dimension LL = 1.5 inches (38.10
mm) min. and 1.75 inches (44.45 mm) max.
6
7
8
9
10 Dimension r (radius) applies to both inside corners of
tab.
The collector shall be internally connected to the case.
3
Document No. DS 2-10000 Rev.A, ECN 2484
Revision Date: 6/30/2015
603-641-3800 • 888-641-SEMI (7364)
LW 15528 DATASHEET TEMPLATE
ECN 2482
www.cobham.com/metelics
2N2221A, L, UA, UB / 2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistor
UA Surface Mount Outline
Symbol
BL
BL2
BW
BW2
CH
L3
LH
LL1
LL2
LS
LW
LW2
Pin no.
Transistor
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.215
.225
5.46
5.71
.225
5.71
.145
.155
3.68
3.93
.155
3.93
.061
.075
1.55
1.90
.003
.007
0.08
0.18
.029
.042
0.74
1.07
.032
.048
0.81
1.22
.072
.088
1.83
2.23
.045
.055
1.14
1.39
.022
.028
0.56
0.71
.006
.022
0.15
0.56
1
Collector
2
Emitter
3
Base
Note
3
5
5
4
N/C
Notes:
1
2
3
Dimensions are in inches.
4
5
The corner shape (square, notch, radius) may vary at
the manufacturer's option, from that shown on the
drawing.
Dimension CH controls the overall package thickness.
When a window lid is used, dimension CH must
increase by a minimum of .010 inch (0.254 mm) and
a maximum of .040 inch (1.020 mm).
Millimeters are given for general information only.
6
7
The co-planarity deviation of all terminal contact
points, as defined by the device seating plane, shall
not exceed .006 inch (0.15mm) for solder dipped
leadless chip carriers.
In accordance with ASME Y14.5M, diameters are
equivalent to φx symbology.
Dimensions LW2 minimum and L3 minimum and the
appropriate castellation length define an unobstructed
three-dimensional space traversing all of the ceramic
layers in which a castellation was designed.
(Castellations are required on the bottom two layers,
optional on the top ceramic layer.) Dimension LW2
maximum and L3 maximum define the maximum
width and depth of the castellation at any point on its
surface. Measurement of these dimensions may be
made prior to solder dipping.
www.cobham.com/metelics
603-641-3800 • 888-641-SEMI (7364)
LW 15528 DATASHEET TEMPLATE
ECN 2482
Document No. DS 2-10000 Rev.A, ECN 2484
Revision Date: 6/30/2015
4
2N2221A, L, UA, UB / 2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistor
UB Surface Mount Outline
UB
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.056
1.17
1.42
.115
.128
2.92
3.25
.085
.108
2.16
2.74
.128
3.25
.108
2.74
.022
.038
0.56
0.96
.017
.035
0.43
0.89
Note
Symbol
LS
1
LS
2
LW
r
r
1
r
2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.036
.040
0.91
1.02
.071
.079
1.81
2.01
.016
.024
0.41
0.61
.008
.203
.012
.305
.022
.559
Note
Notes:
1
2
Dimensions are in inches.
3
Millimeters are given for general information only.
4
5
Hatched areas on package denote metalized areas.
In accordance with ASME Y14.5M, diameters are
equivalent to φx symbology.
Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad
4 = Shielding connected to the lid.
5
Document No. DS 2-10000 Rev.A, ECN 2484
Revision Date: 6/30/2015
603-641-3800 • 888-641-SEMI (7364)
LW 15528 DATASHEET TEMPLATE
ECN 2482
www.cobham.com/metelics
Microchip MCU
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