2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Rev. V4
Features
•
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/510
•
TO-3 (TO-204AA) Package
•
Suitable for High Voltage, High Current, High Speed Switching
Applications
Electrical Characteristics (T
A
= +25
o
C unless otherwise noted)
Parameter
Test Conditions
I
C
= 200 mA dc, L = 42 mH,
f = 30
-
60 GHz
2N6249
2N6250
2N6251
I
C
= 200 mA dc, L = 42 mH,
f = 30
-
60 GHz
R
BE
= 50
Ω
2N6249
2N6250
2N6251
V
EB
= 6 Vdc
V
CE
= 150 V dc, 2N6249
V
CE
= 225 V dc, 2N6250
V
CE
= 300 V dc, 2N6251
V
CE
= 225 V dc, V
BE
=
-1.5
V dc, 2N6249
V
CE
= 300 V dc, V
BE
=
-1.5
V dc, 2N6250
V
CE
= 375 V dc, V
BE
=
-1.5
V dc, 2N6251
V
CE
= 300 V dc, 2N6249
V
CE
= 375 V dc, 2N6250
V
CE
= 450 V dc, 2N6251
I
C
= 10 A dc, V
CE
= 3 Vdc
2N6249
2N6250
2N6251
I
C
= 10 A dc, I
B
= 1.0 A dc, 2N6249
I
C
= 10 A dc, I
B
= 1.25 A dc, 2N6250
I
C
= 10 A dc, I
B
= 1.67 A dc, 2N6251
I
C
= 10 A dc, I
B
= 1.0 A dc, 2N6249
I
C
= 10 A dc, I
B
= 1.25 A dc, 2N6250
I
C
= 10 A dc, I
B
= 1.67 A dc, 2N6251
Symbol Units
Min.
Max.
Collector
-
Emitter Breakdown Voltage
V
(BR)CEO
V dc
—
200
275
350
Collector
-
Emitter Breakdown Voltage
V
(BR)CER
V dc
—
225
300
375
100
Emitter
-
Base Cutoff Current
I
EBO
µA dc
—
Collector
-
Emitter Cutoff Current
I
CEO
mA dc
—
1.0
Collector
-
Emitter Cutoff Current
I
CEX1
µA dc
—
10
Collector
-
Base Cutoff Current
I
CBO
mA dc
—
0.5
Forward Current Transfer Ratio
h
FE1
-
10
8
6
50
50
50
Collector
-
Emitter Sustaining Voltage
V
CE(SAT)
V dc
—
1.5
Base
-
Emitter Saturation Voltage
V
BE(SAT)
V dc
—
2.25
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Rev. V4
Electrical Characteristics (T
A
= +25
o
C unless otherwise noted)
Parameter
Test Conditions
T
A
= +125
o
C
V
CE
= 225 V dc, V
BE
=
-1.5
V dc, 2N6249
V
CE
= 300 V dc, V
BE
=
-1.5
V dc, 2N6250
V
CE
= 375 V dc, V
BE
=
-1.5
V dc, 2N6251
T
A
=
-55
o
C
V
CE
= 3 V dc, I
C
= 10 A dc
2N6249
2N6250
2N6251
Symbol Units
Min.
Max.
Collector
-
Emitter Cutoff Current
I
CEX2
µA dc
—
90
Forward
-
Current Transfer Ratio
h
FE2
-
5
4
3
Dynamic Characteristics
Small-Signal Short-Circuit Forward Current
Transfer Ratio
Open Capacitance Open Circuit
Switching Characteristics
V
CC
= 200 Vdc; I
C
= 10 A dc;
I
B
= 1.0 A dc, 2N6249
I
B
= 1.25 A dc, 2N6250
I
B
= 1.67 A dc, 2N6251
V
CC
= 200 Vdc; I
C
= 10 A dc;
I
B
= 1.0 A dc, 2N6249
I
B
= 1.25 A dc, 2N6250
I
B
= 1.67 A dc, 2N6251
I
C
= 1 A dc, V
CE
= 10 Vdc, f = 1 MHz
| h
FE
|
-
2.5
15.0
V
CE
= 10 Vdc, I
C
= 0, 100 kHz ≤ f ≤ 1 MHz
C
obo
pF
—
500
Turn-On Time
t
on
µs
—
2.0
Turn-Off Time
t
off
µs
—
4.5
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
Test 4:
Test 5:
Test 6:
T
C
= +25 °C, I Cycle, t = 1.0 s (see figure 12 of MIL-PRF-19500/371)
V
CE
= 17.5 Vdc, I
C
= 10 A dc
V
CE
= 30 Vdc, I
C
= 5.8 A dc
V
CE
= 100 Vdc, I
C
= 0.3 A dc
V
CE
= 200 Vdc, I
C
= 0.13 A dc, (for 2N6249 only)
V
CE
= 275 Vdc, I
C
= 0.09 A dc, (for 2N6250 only)
V
CE
= 350 Vdc, I
C
= 0.065 A dc, (for 2N6251 only)
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Rev. V4
Absolute Maximum Ratings
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
A
= +25°C
@ T
C
= +25°C
1
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
J
, T
STG
2N6249
200
300
2N6250
275
375
6
10
5
6
175
-65
to +200
2N6251
350
450
Units
V dc
V dc
V dc
A dc
A dc
W
°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
2
Symbol
R
θJC
Max. Value
1.0°C/W
(1)
(2)
For temperature-power derating curves, see figures 5 and 6 of MIL-PRF-19500/510
For thermal impedance curves, see figures 7, 8 and 9 of MIL-PRF-19500/510
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Rev. V4
Outline Drawing (TO-3)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Rev. V4
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Components as a service to its customers and may be used for informational purposes only. Except as provided in VPT
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5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.