The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 14 April 2013.
INCH POUND
MIL-PRF-19500/510H
14 January 2013
SUPERSEDING
MIL-PRF-19500/510G
10 January 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPE 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3,
JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB,
JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four
levels of product assurance are provided for each device type as specified in
MIL-PRF-19500.
Two levels of product
assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to
eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“,
“L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA
requirements.
1.2 Physical dimensions. See
figure 1
(similar to TO-3),
figure 2
(JANHC and JANKC),
figure 3
(TO-254AA), and
figure 4
(TO-257AA).
1.3 Maximum ratings at T
A
= +25
o
C, unless otherwise specified.
Type
P
T
T
A
= +25°C
W
2N6249
2N6249T1
2N6249T3
2N6250
2N6250T1
2N6250T3
2N6251
2N6251T1
2N6251T3
6.0
6.0
4.0
6.0
6.0
4.0
6.0
6.0
4.0
P
T
(1)
T
C
= +25°C
W
175
175
(3) 125
175
175
(3) 125
175
175
(3) 125
R
θJC
(2)
°C/W
1.0
1.0
1.3
1.0
1.0
1.3
1.0
1.0
1.3
V
CBO
V
CEO
V
EBO
I
C
I
B
T
J
and
T
STG
°C
V dc
300
300
300
375
375
375
450
450
450
V dc
200
200
200
275
275
275
350
350
350
V dc
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
A dc
10
10
10
10
10
10
10
10
10
A dc
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
-65
to
+200
(1) For temperature-power derating curves, see
figures 5
and
6.
(2) For thermal impedance curves, see
figures 7, 8,
and
9.
(3) For TO-257 devices with typical mounting and small footprint, conservatively rating at 125 W and 1.3°C/W
only.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
https://assist.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/510H
1.4 Primary electrical characteristics at T
A
= +25°C.
h
FE1
Types
Limits
I
C
= 10 A dc
V
CE
= 3 V dc
C
obo
V
CB
= 10 V dc
I
C
= 0
100 kHz
≤
f
≤
1 MHz
pF
500
h
fe
V
CE
= 10 V dc
I
C
= 1 A dc
f = 1 MHz
2.5
15.0
2.5
15.0
2.5
15.0
Pulse
response
t
on
µs
2.0
t
off
µs
4.5
2N6249, 2N6249T1, 2N6249T3
Minimum
Maximum
Minimum
Maximum
Minimum
Maximum
10
50
8
50
6
50
2N6250, 2N6250T1, 2N6250T3
500
2.0
4.5
2N6251, 2N6251T1, 2N6251T3
500
2.0
4.5
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.dla.mil/quicksearch
or
https://assist.dla.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/510H
Ltr
Dimensions
Inches
Min
Max
Millimeters
Min
Max
22.23
6.35
12.57
3.33
1.27
0.97
7.92
11.43
13.34
4.78
3.43
1.35
12.70
1.27
3.84
29.90
10.67
5.21
16.89
4.09
30.40
11.18
6.35
17.15
Note
TO-3
CD
CH
HR
HR
1
HT
LD
LL
L
1
MHD
MHS
PS
PS
1
S
1
.151
1.177
.420
.205
.665
.250
.495
.131
.050
.038
.312
.875
.450
.525
.188
.135
.053
.500
.050
.161
1.197
.440
.25
.675
3, 5
3
5
2
2, 3
2
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. These dimensions should be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane.
When gage is not used, measurement will be made at seating plane.
3. Two leads.
4. Collector shall be electrically connected to the case.
5. LD applies between L
1
and LL maximum. Lead diameter shall not exceed twice LD within L
1
.
6. In accordance with ASME Y14.5M, diameters are equivalent to
φ
symbology.
FIGURE 1. Physical dimensions (similar to TO-3).
3
MIL-PRF-19500/510H
Ltr.
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.205
.215
5.21
5.46
A, C
DESIGN DATA
Metalization:
Top:
Back:
Back side:
Chip thickness:
Bonding pad:
Aluminum 54,000
Å
minimum, 60,000
Å
nominal.
Al/Ti/Ni/Au 10,000
Å
minimum, 12,500
Å
nominal.
Collector.
.012 inch (0.305 mm)
±.002
inch (0.051 mm).
B = .018 inch (0.46 mm) x .040 (1.02 mm).
E = .018 inch (0.46 mm) x .040 (1.02 mm).
FIGURE 2. JANHCB and JANKCB (B version) die dimensions.
4
MIL-PRF-19500/510H
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.535
.249
.035
.530
.545
.260
.045
.550
13.59
6.32
0.89
13.46
13.84
6.60
1.14
BL
CH
LD
LL
LO
LS
MHD
MHO
TL
TT
TW
Term 1
Term 2
Term 3
TO-254
13.97
.150 BSC
.150 BSC
.139
.665
.790
.040
.535
.149
.685
.800
.050
.545
3.81 BSC
3.80 BSC
3.53
16.89
20.07
1.02
13.59
Base
Collector
Emitter
3.78
17.40
20.32
1.27
13.84
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Methods used for electrical isolation of terminals feedthroughs shall employ materials that contain a minimum
of 90 percent AL203 (ceramic).
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 3. Dimensions and configuration 2N6249T1, 2N6250T1, and 2N6251T1 (TO-254AA).
5
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