The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 May 2013.
INCH-POUND
MIL-PRF-19500/545J
6 February 2013
SUPERSEDING
MIL-PRF-19500/545H
12 September 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3, JAN, JANTX, JANTXV,
JANS, JANHC, AND JANKC, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB,
JANHCC, JANKCB, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL,
JANKCCR, JANKCCF, JANKCCG, AND JANKCCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in
MIL-PRF-19500.
Two levels of product assurance are provided for each unencapsulated
device type. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to
identify devices, which have passed RHA requirements.
1.2 Physical dimensions. See
figure 1
(similar to TO-205), figures
2
and
3,
(JANHC and JANKC), and
figure 4 (U3).
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25°C.
Types
P
T
T
A
= +25°C
(1)
W
1
1
1.16
1.16
P
T
T
C
= +25°C
(1)
W
10
10
100
100
R
θJA
(2)
°C/W
175
175
150
150
R
θJC
(2)
°C/W
10
10
1.75
1.75
V
CBO
V
CEO
V
EBO
I
C
I
C
(3)
A dc
10
10
10
10
Reverse
pulse
energy (4)
mj
15
15
15
15
T
STG
and
T
J
°C
-65 to + 200
-65 to + 200
V dc
100
100
100
100
V dc
80
80
80
80
V dc
5.5
5.5
5.5
5.5
A dc
2
2
2
2
2N5151, L
2N5153, L
2N5151U3
2N5153U3
(1)
(2)
(3)
(4)
See
figures 5, 6, 7,
and
8
for temperature-power derating curves.
See
figures 9, 10,
and
11
for transient thermal impedance graph.
This value applies for Pw
≤
8.3 ms, duty cycle
≤
1 percent.
This rating is based on the capability of the transistors to operate safely in the unclamped inductive load
energy test circuit
figure 12.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/545J
1.4 Primary electrical characteristics at T
C
= +25°C.
Limits
h
FE2
(1)
V
CE
= 5 V
I
C
= 2.5 A dc
|h
fe
|
V
CE
= 5 V
I
C
= 500 mA dc
f = 10 MHz
2N5151
(2)
2N5153
(2)
V
BE(sat)2
(1)
I
C
= 5 A dc
I
B
= 500 mA dc
V
CE(sat)2
(1)
I
C
= 5 A dc
I
B
= 500 mA dc
C
obo
V
CB
= 10 V dc
I
E
= 0
f = 1 MHz
2N5151
(2)
2N5153
(2)
V dc
Min
Max (TO-205)
Max (U3)
30
90
90
70
200
200
6
7
2.2
2.2
V dc
1.5
1.5
pF
250
250
(1) Pulsed, see
4.5.1.
(2) The limits specified apply to all package outlines unless otherwise stated.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.dla.mil/quicksearch
or
https://assist.dla.mil
or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/545J
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.240
.335
.335
.260
.370
7.75
6.10
8.51
8.51
6.60
9.40
7
8, 9
Symbol
Notes
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
Q
TL
6
TO-205
.200 TP
.016
.021
5.08 TP
0.41
0.53
See notes 8, 9, 12, 13
.016
.019
.050
.250
.050
.029
.045
0.74
6.35
1.27
1.14
0.41
0.48
1.27
8, 9
8, 9
8, 9
6
4, 5
TW
r
α
P
.028
.034
.010
0.71
0.86
0.25
3
11
7
45° TP
.100
45° TP
2.54
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab
at MMC.
8. LU applied between L
1
and L
2
. LD applies between L
2
and LL minimum. Diameter is uncontrolled in L
1
and
beyond LL minimum.
9. All three leads.
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
13. For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum.
14. For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm)
maximum.
15. Lead designation, depending on device type, shall be as follows: lead numbering; lead 1 = emitter,
lead 2 = base, and lead 3 = collector.
FIGURE 1. Physical dimensions (TO-205).
3
MIL-PRF-19500/545J
Dimensions
Ltr
Min
A
.100
Inches
Max
.105
Millimeters
Min
2.54
Max
2.67
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Unless otherwise specified, tolerance is
±.005
inch (0.13 mm).
4. The physical characteristics of the die are;
5.
Thickness: .0078 inch (0.198 mm) nominal, tolerance is
±.005
inch (0.13 mm).
Top metal: Aluminum, 25,000 Å minimum, 33,000 Å nominal.
Back metal: Gold 1,500 Å minimum, 2,500 Å nominal.
Back side: Collector.
Bonding pad: .012 inch (0.305 mm) min. x .030 inch (0.761 mm) minimum.
FIGURE 2. JANHCB and JANKCB die dimensions.
4
MIL-PRF-19500/545J
Dimensions
Ltr.
Min
A
.126
Inches
Max
.130
Millimeters
Min
3.20
Max
3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics of the die are:
Thickness:
.010 inch (0.25 mm)
±.0015
inch (0.038 mm) nominal.
Top metal:
Aluminum 30,000
Å
minimum, 33,000
Å
nominal.
Back metal: A. Al/Ti/Ni/Ag15kÅ/2kÅ/7kÅ/7kÅ min. 18kÅ/3kÅ/10kÅ/10kÅ nom.
B. Gold 2,500
Å
minimum, 3,000
Å
nominal.
Back side: Collector.
Bonding pad: .012 inch (0.305 mm) min. x .030 inch (0.761 mm) minimum.
FIGURE 3. JANHC and JANKC C-version die dimensions.
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
