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Datasheet> 器件分类 > 分立半导体> 晶体管> ALD1116PAXXXX

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ALD1116PAXXXX: 产品描述Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小115KB，共3页; 制造商ALD [Advanced Linear Devices]

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ALD1116PAXXXX概述

Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ALD1116PAXXXX规格参数

参数名称	属性值
厂商名称	ALD [Advanced Linear Devices]
包装说明	IN-LINE, R-PDIP-T8
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW THRESHOLD, HIGH INPUT IMPEDANCE
配置	COMMON SUBSTRATE, 2 ELEMENTS
最小漏源击穿电压	12 V
最大漏源导通电阻	500 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDIP-T8
元件数量	2
端子数量	8
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON

ALD1116PAXXXX相似产品对比

	ALD1116PAXXXX	ALD1106PBXXXX	ALD1106DBMXXXX	ALD1106SBXXXX	ALD1116DAMXXXX	ALD1116SAXXXX
描述	Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
包装说明	IN-LINE, R-PDIP-T8	IN-LINE, R-PDIP-T14	IN-LINE, R-CDIP-T14	SMALL OUTLINE, R-PDSO-G14	IN-LINE, R-CDIP-T8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW THRESHOLD, HIGH INPUT IMPEDANCE	LOW THRESHOLD, HIGH INPUT IMPEDANCE	LOW THRESHOLD, HIGH INPUT IMPEDANCE	LOW THRESHOLD, HIGH INPUT IMPEDANCE	LOW THRESHOLD, HIGH INPUT IMPEDANCE	LOW THRESHOLD, HIGH INPUT IMPEDANCE
配置	COMMON SUBSTRATE, 2 ELEMENTS	COMMON SUBSTRATE, 4 ELEMENTS	COMMON SUBSTRATE, 4 ELEMENTS	COMMON SUBSTRATE, 4 ELEMENTS	COMMON SUBSTRATE, 2 ELEMENTS	COMMON SUBSTRATE, 2 ELEMENTS
最小漏源击穿电压	12 V	12 V	12 V	12 V	12 V	12 V
最大漏源导通电阻	500 Ω	500 Ω	500 Ω	500 Ω	500 Ω	500 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDIP-T8	R-PDIP-T14	R-CDIP-T14	R-PDSO-G14	R-CDIP-T8	R-PDSO-G8
元件数量	2	4	4	4	2	2
端子数量	8	14	14	14	8	8
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	YES	NO	YES
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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