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MVSMCJ6070E3

产品描述Trans Voltage Suppressor Diode, 1500W, 155V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小393KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MVSMCJ6070E3概述

Trans Voltage Suppressor Diode, 1500W, 155V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

MVSMCJ6070E3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-214AB
包装说明R-PDSO-C2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
最大击穿电压210 V
最小击穿电压171 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压155 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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SMCG6036 thru SMCG6072A
and SMCJ6036 thru SMCJ6072A
Bidirectional Transient Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
These surface mount Transient Voltage Suppressors (TVSs) are used for protecting
sensitive components requiring low clamping voltage levels. They are rated at high
current impulses typically generated by inductive switching transients. Other benefits
are achieved with low-profile surface mount J-bend or Gull-wing terminals for stress-
relief and lower weight. Its low-flat profile provides easier insertion or automatic
handling benefits compared to other MELF style packages. Options for screening
similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX, MV or MSP
prefixes respectively for part numbers and high reliability screening in accordance
with MIL-PRF-19500/507.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Working Standoff Voltages: 5.5 volts to 185 volts
Metallurgically bonded
Reliability data per JESD22-A108, JESD22-A104,
JESD22-A113-B, JESD22-A101-B, and JESD22-A102
Thermally efficient surface mount with J-bends or
Gull wings termination for stress relief (flat handling
surface and easier placement)
Options for screening in accordance with MIL-PRF-
19500/507 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes to
part numbers respectively. For example, designate a
MXSMCJ6036A for a JANTX screen.
APPLICATIONS / BENEFITS
For high reliability transient voltage suppression in
low profile surface mount locations requiring easy
placement and strain relief
Light weight for airborne or satellite applications
Superior surge quality to protect from ESD and EFT
transients per IEC61000-4-2 and -4-4
Lightning surge protection per IEC61000-4-5 for Class
1 and 2 with source impedance of 42 Ohms as well as
Class 3 and 4 selectively at lower voltages (V
WM
) and
higher surge current (I
PP
) ratings herein
Protects sensitive components such as ICs, CMOS,
Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
MAXIMUM RATINGS
Operating temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
1500 Watts of Peak Pulse Power at 10/1000 µs as
shown in Figure 3 (see Figure 1 for other t
P
values)
Thermal resistance, R
θJL
= 20°C/W
Impulse repetition rate (duty factor): 0.01%
5.0 Watt steady-state maximum power at T
L
=25°C
t
clamping
(0V to V
(BR)
min): less than 5 ns
MECHANICAL AND PACKAGING
Molded epoxy package meets UL94V-0
Terminals: solderable per MIL-STD-750
Method 2026. (max 260 °C for 10 sec.)
Body marked with P/N without SMCJ or SMCG letters
(ie. 6036A, 6039, 6053, 6072A, etc.)
No polarity band is shown on these bi-directional types
Weight: 0.25 grams (approximate)
Tape & Reel packaging per EIA-481
(2500 units/reel)
ELECTRICAL CHARACTERISTICS @ 25
o
C (Test Both Polarities)
MICROSEMI
Part Number
Modified
“G”
Bend Lead
SMCG6036
SMCG6036A
SMCG6037
SMCG6037A
SMCG6038
SMCG6038A
SMCG6039
SMCG6039A
SMCG6040
SMCG6040A
SMCG6041
SMCG6041A
MICROSEMI
Part Number
Modified
“J”
Bend Lead
SMCJ6036
SMCJ6036A
SMCJ6037
SMCJ6037A
SMCJ6038
SMCJ6038A
SMCJ6039
SMCJ6039A
SMCJ6040
SMCJ6040A
SMCJ6041
SMCJ6041A
Rated
Stand-off
Voltage
(Note 1)
V
WM
Volts
5.5
6.0
6.5
7.0
7.0
7.5
8.0
8.5
8.5
9.0
9.0
10.0
Maximum
Clamping
Voltage
@ I
PP
(10/1000 µs)
V
C
Volts
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
Maximum
Standby
Current
@ V
WM
I
D
µA
1000
1000
500
500
200
200
50
50
10
10
5
5
Maximum
Peak Pulse
Current
(Fig. 2)
I
PP
A
128
132
120
124
109
112
100
103
93
96
87
90
Maximum
Temperature
Coefficient
of V
(BR)
α
V(BR)
%/
o
C
.061
.061
.065
.065
.068
.068
.073
.073
.075
.075
.078
.078
Breakdown
Voltage*
V
(BR)
@
Volts
6.75 - 8.25
7.13 - 7.88
7.38 - 9.02
7.79 - 8.61
8.19 - 10.00
8.65 - 9.55
9.0 - 11.0
9.5 - 10.5
9.9 - 12.1
10.5 - 11.6
10.8 - 13.2
11.4 - 12.6
SMCG/J6036 thru
SMCG/J6072A
I
(BR)
mA
10
10
10
10
10
10
1
1
1
1
1
1
Copyright
2003
01-24-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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