The OP183 is a single-supply, 5 MHz bandwidth amplifier with
slew rates of 10 V/µs. The OP283 is a dual version. Both can
operate from voltages as low as 3 volts and up to 36 volts. This
combination of slew rate and bandwidth yields excellent single-
supply ac performance making them ideally suited for telecom and
multimedia audio applications.
In addition to its ac characteristics, the OP183 family provides
good dc performance with guaranteed 1 mV offset. Noise is a
respectable 10 nV/√Hz. Supply current is only 1.2 mA per amplifier.
OLE
TE
8-Lead Narrow-Body SO
(S Suffix)
1
8
7
8-Lead Epoxy DIP
(P Suffix)
1
8
7
OUTA
–INA
V+
2
OP283
2
OUTB
–INB
+INB
3
TOP VIEW
(Not to Scale)
6
+INA
V–
3
6
4
5
4
OP283
5
These amplifiers are well suited for single-supply applications that
require moderate bandwidths even when used in high gain configu-
rations. This makes them useful in filters and instrumentation.
Their output drive capability and very wide full power bandwidth
make them a good choice for multimedia headphone drivers or
microphone input amplifiers.
The OP183 and OP283 are available in 8-pin plastic DIP and SO-8
surface mount packages. They are specified over the extended
industrial (–40°C to +85°C) temperature range.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
OP183/OP283–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = +5.0 V, T = +25 C unless otherwise noted)
S
A
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short Circuit Limit
Symbol
V
OS
I
B
I
OS
CMRR
A
VO
∆V
OS
/∆T
∆I
B
/∆T
V
OH
V
OL
I
SC
Conditions
V
CM
= 2.5 V, V
OUT
= 2.5 V,
–40°C
≤
T
A
≤
+85°C
V
CM
= 2.5 V, V
OUT
= 2.5 V,
–40°C
≤
T
A
≤
+85°C
V
CM
= 2.5 V, V
OUT
= 2.5 V,
–40°C
≤
T
A
≤
+85°C
Min
Typ
0.025
350
430
11
Max
1.0
1.25
600
750
±
50
+3.5
Units
mV
mV
nA
nA
nA
nA
V
dB
V/mV
µV/°C
nA/°C
V
mV
mA
mA
0
V
CM
= 0 to 3.5 V
–40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ, 0.2
≤
V
O
≤
3.8 V
70
100
104
4
–1.6
R
L
= 2 kΩ to GND
R
L
= 2 kΩ to GND
Source
Sink
V
S
= +4 V to +6 V,
–40°C
≤
T
A
≤
+85°C
V
O
= 2.5 V,
–40°C
≤
T
A
≤
+85°C
+4.0
4.22
50
25
30
OBS
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
I
SY
Supply Voltage Range
DYNAMIC PERFORMANCE
Slew Rate
Full-Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
V
S
SR
BWp
t
S
GBP
φm
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
e
n p-p
e
n
i
n
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short Circuit Limit
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Gain Bandwidth Product
NOISE PERFORMANCE
Voltage Noise Density
Symbol
V
OS
I
B
I
OS
CMRR
A
VO
V
OH
V
OL
I
SC
75
OLE
TE
70
104
1.2
dB
+3
5
1.5
±
18
mA
V
R
L
= 2 kΩ
1% Distortion
To 0.01%
10
>50
1.5
5
46
2
10
0.4
V/µs
kHz
µs
MHz
Degrees
µV
p-p
nV/√Hz
pA/√Hz
0.1 Hz to 10 Hz
f = 1 kHz, V
CM
= 2.5 V
S
A
ELECTRICAL CHARACTERISTICS
(@ V = +3.0 V, T = +25 C unless otherwise noted)
Conditions
V
CM
= 1.5 V, V
OUT
= 1.5 V,
–40°C
≤
T
A
≤
+85°C
V
CM
= 1.5 V, V
OUT
= 1.5 V,
–40°C
≤
T
A
≤
+85°C
V
CM
= 1.5 V, V
OUT
= 1.5 V,
–40°C
≤
T
A
≤
+85°C
0
V
CM
= 0 V to 1.5 V,
–40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ, 0.2
≤
V
O
≤
1.8 V
R
L
= 2 kΩ to GND
R
L
= 2 kΩ to GND
Source
Sink
V
S
= +2.5 V to +3.5 V,
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+85°C, V
O
= 1.5 V
70
100
+2.0
103
260
2.25
90
25
30
Min
Typ
0.3
350
11
Max
1.0
1.25
600
750
±
50
+1.5
Units
mV
mV
nA
nA
nA
nA
V
dB
V/mV
V
mV
mA
mA
125
PSRR
I
SY
GBP
e
n
60
113
1.2
5
1.5
dB
mA
MHz
nV/√Hz
f = 1 kHz, V
CM
= 1.5 V
10
–2–
REV. B
OP183/OP283
ELECTRICAL CHARACTERISTICS
(@ V =
S
15.0 V, T
A
= +25 C unless otherwise noted)
Min
Typ
0.01
Max
1.0
1.25
600
750
±
50
+13.5
Units
mV
mV
nA
nA
nA
V
dB
V/mV
µV/°C
nA/°C
mV
V
V
mA
mA
Ω
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Long Term Offset Voltage
Symbol
V
OS
I
B
I
OS
CMRR
A
VO
∆V
OS
/∆T
∆I
B
/∆T
V
OS
Conditions
–40°C
≤
T
A
≤
+85°C
–40°C
≤
T
A
≤
+85°C
–40
≤
T
A
≤
+85°C
–15
V
CM
= –15 V to +13.5 V,
–40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ
70
100
86
1000
3
–1.6
300
400
11
OBS
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short-Circuit Limit
V
OH
V
OL
I
SC
Open -Loop Output Impedance
Z
OUT
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
Supply Voltage Range
DYNAMIC PERFORMANCE
Slew Rate
Full-Power Bandwidth
Settling Time
Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
PSRR
I
SY
V
S
SR
BW
p
t
S
GBP
φm
e
n p-p
e
n
i
n
Specifications subject to change without notice.
Note 1
R
L
= 2 kΩ to GND, –40°C
≤
T
A
≤
+85°C
R
L
= 2 kΩ to GND, –40°C
≤
T
A
≤
+85°C
Source
Sink
f = 1 MHz, A
V
= +1
+13.9 14.1
–14.05
30
50
15
1.5
OLE
TE
–13.9
V
S
=
±
2.5 V to
±
18 V,
–40°C
≤
T
A
≤
+85°C
V
S
=
±
18 V, V
O
= 0 V,
–40°C
≤
T
A
≤
+85°C
70
112
1.2
dB
+3
10
1.75
±
18
mA
V
R
L
= 2 kΩ
1% Distortion
To 0.01%
15
50
1.5
5
56
2
10
0.4
0.1 Hz to 10 Hz
f = 1 kHz
Conditions
V
S
=
±
15 V, V
O
= 0 V
V
CM
= 2.5 V
V
CM
= 2.5 V
V
CM
= 0 V to 3.5 V
V =
±
2.5 V to
±
18 V
R
L
= 2 kΩ, 0.2
≤
V
O
≤
3.8 V
R
L
= 2 kΩ
R
L
= 2 kΩ
V
S
=
±
15 V, V
O
= 0 V, R
L
=
∞
Limit
1.0
±
600
±
50
70
70
100
4.0
75
1.5
Units
mV max
nA max
nA max
dB min
dB min
V/mV min
V min
mV max
mA max
V/µs
kHz
µs
MHz
degrees
µV
p-p
nV/√Hz
pA/√Hz
NOTES
1
Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125
°C,
with an LTPD of 1.3.
WAFER TEST LIMITS
Parameter
Offset Voltage
Input Bias Current
Input Offset Current
Common-Mode Rejection
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage High
Output Voltage Low
Supply Current/Amplifier
(@ V
S
= +5.0 V, T
A
= +25 C unless otherwise noted)
Symbol
V
OS
I
B
I
OS
CMRR
PSRR
A
VO
V
OH
V
OL
I
SY
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
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