Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-71, TO-71, 8 PIN
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
零件包装代码 | TO-71 |
包装说明 | CYLINDRICAL, O-MBCY-W8 |
针数 | 8 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.03 A |
集电极-发射极最大电压 | 45 V |
配置 | Single |
最小直流电流增益 (hFE) | 60 |
JEDEC-95代码 | TO-71 |
JESD-30 代码 | O-MBCY-W8 |
JESD-609代码 | e0 |
端子数量 | 8 |
最高工作温度 | 175 °C |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | NPN |
最大功率耗散 (Abs) | 0.25 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | WIRE |
端子位置 | BOTTOM |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 60 MHz |
Base Number Matches | 1 |
2N2972 | 2N2913 | 2N2915 | 2N2897 | 2N335A | 2N333A | |
---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-71, TO-71, 8 PIN | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-77, TO-77, 8 PIN | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-77, TO-77, 8 PIN | Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | TO-71 | TO-77 | TO-77 | BCY | TO-5 | TO-5 |
包装说明 | CYLINDRICAL, O-MBCY-W8 | CYLINDRICAL, O-MBCY-W8 | CYLINDRICAL, O-MBCY-W8 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
针数 | 8 | 8 | 8 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.03 A | 0.03 A | 0.03 A | 1 A | 0.025 A | 0.025 A |
集电极-发射极最大电压 | 45 V | 45 V | 45 V | 45 V | 45 V | 45 V |
最小直流电流增益 (hFE) | 60 | 60 | 60 | 50 | 45 | 27 |
JEDEC-95代码 | TO-71 | TO-77 | TO-77 | TO-18 | TO-5 | TO-5 |
JESD-30 代码 | O-MBCY-W8 | O-MBCY-W8 | O-MBCY-W8 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
端子数量 | 8 | 8 | 8 | 3 | 3 | 3 |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
最大功率耗散 (Abs) | 0.25 W | 0.3 W | 0.3 W | 0.5 W | 0.5 W | 0.5 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 60 MHz | 60 MHz | 60 MHz | 100 MHz | 13 MHz | 11 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
配置 | Single | - | - | SINGLE | SINGLE | SINGLE |
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