Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRA MINI-3
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Central Semiconductor |
| 包装说明 | HALOGEN FREE AND ULTRA MINI-3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V |
| 最大漏极电流 (Abs) (ID) | 0.2 A |
| 最大漏极电流 (ID) | 0.1 A |
| 最大漏源导通电阻 | 3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-XBCC-N3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 0.1 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| CEDM7001BK | CEDM7001TR | 8D3054C-Z | CEDM8001BK | |
|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRA MINI-3 | Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRA MINI-3 | Toggle Switches | Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRA MINI-3 |
| 是否无铅 | 含铅 | 含铅 | - | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 |
| 厂商名称 | Central Semiconductor | Central Semiconductor | - | Central Semiconductor |
| 包装说明 | HALOGEN FREE AND ULTRA MINI-3 | HALOGEN FREE AND ULTRA MINI-3 | - | HALOGEN FREE AND ULTRA MINI-3 |
| 针数 | 3 | 3 | - | 3 |
| Reach Compliance Code | unknown | unknown | - | not_compliant |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 |
| 外壳连接 | DRAIN | DRAIN | - | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V | 20 V | - | 20 V |
| 最大漏极电流 (Abs) (ID) | 0.2 A | 0.2 A | - | 0.1 A |
| 最大漏极电流 (ID) | 0.1 A | 0.1 A | - | 0.1 A |
| 最大漏源导通电阻 | 3 Ω | 3 Ω | - | 8 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-XBCC-N3 | R-XBCC-N3 | - | R-XBCC-N3 |
| JESD-609代码 | e0 | e0 | - | e0 |
| 元件数量 | 1 | 1 | - | 1 |
| 端子数量 | 3 | 3 | - | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | - | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | - | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | P-CHANNEL |
| 最大功率耗散 (Abs) | 0.1 W | 0.1 W | - | 0.1 W |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified |
| 表面贴装 | YES | YES | - | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | TIN LEAD |
| 端子形式 | NO LEAD | NO LEAD | - | NO LEAD |
| 端子位置 | BOTTOM | BOTTOM | - | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | - | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON |
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