CEDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001
is an N-Channel Enhancement-mode Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODE: H
SOT-883L CASE
APPLICATIONS:
• Load/Power Switches
• DC - DC Converters
• Battery Powered Portable Equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Peak Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
FEATURES:
• 100mW Power Dissipation
• 0.4mm Low Package Profile
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, TLP™ 1x0.6mm, SOT-883L Leadless
Surface Mount Package
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
UNITS
V
V
mA
mA
mW
°C
UNITS
μA
μA
V
V
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
ns
ns
20
10
100
200
100
-65 to +150
MAX
1.0
1.0
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
gfs
Crss
Ciss
Coss
ton
toff
VDS=20V, VGS=0
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=4.0V,
VGS=2.5V,
VGS=1.5V,
ID=10mA
ID=10mA
ID=1.0mA
0.566
0.16
0.08
100
4.0
9.0
9.5
50
75
20
0.6
0.9
3.0
4.0
15
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, ID=100mA
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDD=3.0V, VGS=2.5V, ID=10mA
VDD=3.0V, VGS=2.5V, ID=10mA
R7 (2-August 2011)
51单片机
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