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“Standard”:
2.
3.
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7.
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DATA SHEET
COMPOUND TRANSISTOR
CE2F3P
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE2F3P is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter as protect
elements. This transistor is ideal for actuator drives of OA
equipments and electric equipments.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• On-chip bias resistor: R
1
= 2.2 kΩ, R
2
= 10 kΩ
• Low power consumption during driving:
V
OL
= 0.12 V @V
I
= 5.0 V, I
C
= 0.5 A
• On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
60
60
15
±2.0
±3.0
0.03
1.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance 1
Input resistance 2
Turn-on time
Storage time
Fall time
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
t
on
t
stg
t
f
I
C
= 1.0 A
I
BI
=
−I
B2
= 10 mA
V
CC
= 20 V, R
L
= 20
Ω
Conditions
V
CB
= 40 V, I
E
= 0
V
CE
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 1.0 A
V
CE
= 5.0 V, I
C
= 2.0 A
V
I
= 5.0 V, I
C
= 0.5 A
V
CE
= 12 V, I
C
= 100
µ
A
1.54
7.0
700
1000
500
1200
1600
1200
0.12
0.5
2.2
10.0
0.4
1.4
0.5
0.3
0.4
2.86
13.0
3000
MIN.
TYP.
MAX.
100
Unit
nA
−
−
−
V
V
kΩ
kΩ
µ
s
µ
s
µ
s
** Pulse test PW
≤
350
µ
s, duty cycle
≤
2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13110EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
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