电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IDT71V65602S166PF

产品描述ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
产品类别存储    存储   
文件大小305KB,共23页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT71V65602S166PF概述

ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100

IDT71V65602S166PF规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间3.5 ns
JESD-30 代码R-PQFP-G100
JESD-609代码e0
长度20 mm
内存密度9437184 bit
内存集成电路类型ZBT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量100
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)240
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层TIN LEAD
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度14 mm

文档预览

下载PDF文档
256K x 36, 512K x 18
3.3V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
Features
Preliminary
IDT71V65602
IDT71V65802
Address and control signals are applied to the SRAM during one clock
x
256K x 36, 512K x 18 memory configurations
cycle, and two cycles later the associated data cycle occurs, be it read or write.
x
The IDT71V65602/5802 contain data I/O, address and control signal
Supports high performance system speed - 166MHz(3.5ns
registers. Output enable is the only asynchronous signal and can be used
Clock-to-Data Access)
x
ZBT
TM
Feature - No dead cycles between write and read cycles
to disable the outputs at any given time.
x
Internally synchronized output buffer enable eliminates
A Clock Enable (CEN) pin allows operation of the IDT71V65602/5802
to be suspended as long as necessary. All synchronous inputs are
the need to control
OE
x
Single R/W (READ/WRITE) control pin
ignored when (CEN) is high and the internal device registers will hold their
W
x
Positive clock-edge triggered address, data, and control
previous values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the
signal registers for fully pipelined applications
x
4-word burst capability (interleaved or linear)
user to deselect the device when desired. If any one of these three are
x
Individual byte write (BW
1
-
not asserted when ADV/LD is low, no new memory operation can be
BW BW
4
) control (May tie active)
x
Three chip enables for simple depth expansion
initiated. However, any pending data transfers (reads or writes) will be
x
completed. The data bus will tri-state two cycles after chip is deselected or
3.3V power supply (±5%)
x
2.5V I/O Supply (V
DDQ
)
a write is initiated.
x
Power down controlled by ZZ input
The IDT71V65602/5802 have an on-chip burst counter. In the burst
x
Packaged in a JEDEC standard 100-lead plastic thin quad
mode, the IDT71V65602/5802 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the
LBO
input pin. The
LBO
pin selects between linear and
Description
The IDT71V65602/5802 are 3.3V high-speed 9,437,184-bit interleaved burst sequence. The ADV/LD signal is used to load a new
(9 Megabit) synchronous SRAMs. They are designed to eliminate dead external address (ADV/LD = LOW) or increment the internal burst counter
bus cycles when turning the bus around between reads and writes, or (ADV/LD = HIGH).
The IDT71V65602/5802 SRAM utilize IDT's latest high-performance
writes and reads. Thus, they have been given the name ZBT
TM
, or Zero
CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm 100-
Bus Turnaround.
lead thin plastic quad flatpack (TQFP) as well as a 119-lead ball grid array (BGA).
Pin Description Summary
A
0
-A
1 8
CE
1
, CE
2
,
CE
2
OE
R/W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
A DV /LD
LBO
TM S
TDI
TCK
TDO
ZZ
I/O
0
-I/O
3 1
, I/O
P 1
-I/O
P 4
V
DD
, V
DDQ
V
SS
A d d re s s Inp uts
Chip E nab le s
O utp ut E nab le
Re ad /W rite S ig nal
Clo c k E nab le
Ind ivid ual B y te W rite S e le cts
Clo ck
A d v anc e b urst ad d re s s / Lo ad ne w ad d re ss
Line ar / Inte rle av e d B urs t O rd e r
Te st M o d e S e le c t
Te st Data Inp ut
Te st Clo ck
Te st Data O utp ut
S le e p M o d e
Data Inp ut / O utp ut
Co re P o we r, I/O P o we r
G ro und
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
O utp ut
Inp ut
I/O
S up p ly
S up p ly
S y nchro no us
S y nchro no us
A s ync hro no us
S y nchro no us
S y nchro no us
S y nchro no us
N/A
S y nchro no us
S tatic
N/A
N/A
N/A
N/A
A s ync hro no us
S y nchro no us
S tatic
S tatic
5303 tbl 01
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.
DECEMBER 1999
DSC-5303/00
1
©1999 Integrated Device Technology, Inc.

IDT71V65602S166PF相似产品对比

IDT71V65602S166PF IDT71V65802S166PF IDT71V65802S166PF8 IDT71V65802S166BG8 IDT71V65602S166BG IDT71V65802S166BG
描述 ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, POWER, PLASTIC, TQFP-100 ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, POWER, PLASTIC, BGA-119 ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119 ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
是否无铅 含铅 含铅 含铅 不含铅 不含铅 不含铅
是否Rohs认证 不符合 不符合 不符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 QFP QFP QFP BGA BGA BGA
包装说明 LQFP, LQFP, 14 X 20 MM, POWER, PLASTIC, TQFP-100 14 X 22 MM, POWER, PLASTIC, BGA-119 14 X 22 MM, PLASTIC, BGA-119 14 X 22 MM, PLASTIC, BGA-119
针数 100 100 100 119 119 119
Reach Compliance Code compliant compliant compliant compliant compliant compli
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 3.5 ns 3.5 ns 3.5 ns 3.5 ns 3.5 ns 3.5 ns
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119
JESD-609代码 e0 e0 e0 e3 e3 e3
长度 20 mm 20 mm 20 mm 22 mm 22 mm 22 mm
内存密度 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bi
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 36 18 18 18 36 18
湿度敏感等级 3 3 3 1 1 1
功能数量 1 1 1 1 1 1
端子数量 100 100 100 119 119 119
字数 262144 words 524288 words 524288 words 524288 words 262144 words 524288 words
字数代码 256000 512000 512000 512000 256000 512000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX36 512KX18 512KX18 512KX18 256KX36 512KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP BGA BGA BGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 240 240 240 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 3.5 mm 3.5 mm 3.5 mm
最大供电电压 (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
最小供电电压 (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD MATTE TIN MATTE TIN MATTE TIN
端子形式 GULL WING GULL WING GULL WING BALL BALL BALL
端子节距 0.65 mm 0.65 mm 0.65 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 QUAD QUAD QUAD BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 20 20 20 30 30 30
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2731  1699  570  2624  1666  50  39  33  24  2 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved