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MVSAC50E3

产品描述Trans Voltage Suppressor Diode, 500W, 50V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小211KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MVSAC50E3概述

Trans Voltage Suppressor Diode, 500W, 50V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

MVSAC50E3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-41
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
最小击穿电压55.5 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-41
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散2.5 W
认证状态Not Qualified
最大重复峰值反向电压50 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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SAC5.0 thru SAC50, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This SAC5.0 thru SAC50 transient voltage suppressor (TVS) series rated at
500 watts provides an added rectifier element as shown in Figure 4 to
achieve low capacitance in applications for higher speed data or signal
lines. The low capacitance rating of 30 pF may be used for protecting
higher frequency applications in inductive switching environments or
electrical systems involving secondary lightning effects per IEC61000-4-5
as well as RTCA/DO-160D or ARINC 429 for airborne avionics.
If
bidirectional protection is needed, two SAC devices in anti-parallel
configuration are required as shown in Figure 6. With their very fast
response time, they also provide ESD and EFT protection per IEC61000-4-
2 and IEC61000-4-4 respectively.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
DO-41
WWW .
Microsemi
.C
OM
FEATURES
Unidirectional low-capacitance TVS series for
flexible thru-hole mounting (for bidirectional see
Figure 6)
Improved performance in low capacitance of 30 pF
Economical plastic series in flexible axial-leaded
DO-41 package
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for
o
o
added 100% temperature cycle -55 C to +125 C
(10X) as well as surge (3X) and 24 hours HTRB
with post test V
Z
& I
R
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are also
available by adding MQ, MX, or MV prefixes
respectively to part number, e.g. MXSAC5.0,
MVSAC18, etc.
Also available in surface mount with HSMBJ prefix
for part numbers (ex. HSMBJSAC5.0)
RoHS Compliant devices available by adding “e3”
suffix
APPLICATIONS / BENEFITS
Suppresses transient up to 500 Watts Peak Pulse
Power @ 10/1000 µs
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines up to Level 3
Waveform 4 and Level 1 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1:
Class 2:
Class 3:
Class 4:
SAC5.0 to SAC50
SAC5.0 to SAC45
SAC5.0 to SAC22
SAC5.0 to SAC10
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance
Class 1: SAC5.0 to SAC26
Class 2: SAC5.0 to SAC15
Class 3: SAC5.0 to SAC7.0
MAXIMUM RATINGS
Peak Pulse Power Dissipation at 25 C: 500 Watts @
10/1000
μs
with repetition rate of 0.01% or less*
o
Steady State Power Dissipation* at T
L
= +75 C: 2.5 Watts
(Lead Length = 3/8”).
Clamping Speed (0 volts to V
(BR)
Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65 C to +150 C.
o
o
o
MECHANICAL AND PACKAGING
CASE: Void Free Transfer Molded Thermosetting Plastic
epoxy meeting UL94V-0
TERMINATIONS: Tin-lead or RoHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750
method 2026
POLARITY: Cathode indicated by band
MARKING: Part number and cathode band
WEIGHT: 0.7 Grams (Approx.)
See package dimensions on last page
SAC5.0 thru SAC50, e3
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2007
6-20-2007 REV E
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

 
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