TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT
1500 Watt Low Capacitance
Transient Voltage Suppressor
DEVICES
- High Reliability controlled devices
- Unidirectional (A) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 6.5 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
MSMCJLCE6.5A thru MSMCJLCE170A, e3
and MSMCGLCE6.5A thru MSMCGLCE170A, e3
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability
100% surge tested devices
Low capacitance of 100 pF or less
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500. Refer
to
MicroNote 129
for more details on the screening options.
Axial-lead equivalent packages for thru-hole mounting available as MLCE6.5A to MLCE170CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
1500 Watts of Peak Pulse Power at 10/1000
s
Low capacitance for data line protection to 1 MHz
Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC
429, Part 1, par 2.4.1.1)
IEC 61000-4-2 ESD 15 kV (air), 8 kV (contact)
IEC 61000-4-5 (lightning) as further detailed in MLCE6.5 thru MLCE170A data sheet
T1/E1 Line Cards
Base Stations, WAN & XDSL Interfaces
CSU/DSU Equipment
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and 3)
with impulse repetition rate (duty factor) of 0.01 % or less
Clamping Factor: 1.40 @ Full Rated power:
1.30 @ 50 % Rated power
-9
t
clamping
(0 V to V
BR
min): Less than 5x10 seconds
Operating and Storage temperatures: -65 ºC to +150 ºC
Steady State power dissipation: 5.0W @ TL = 50 ºC
Thermal Resistance: 20 ºC /W (typical junction to lead (tab) at mounting plane
When pulse testing, do not pulse in opposite direction. (See “Schematic Applications” section
herein and Figures 5 & 6 for further protection in both directions)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01002 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Gull-wing or J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating
solderable per MIL-STD-750, method 2026
Cathode indicated by band. No cathode band on bi-directional devices.
Part number marked on package
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL option available with up to 750 per 7 inch reel or up to 2500 per 13 inch reel EIA-481-B with 16
mm tape. Add “TR” suffix to part number.
Weight: 0.25 gram (approximately)
PACKAGE DIMENSIONS
(SMCJ)
(SMCG)
A
.115
.121
2.92
3.07
DIMENSIONS IN INCHES
B
C
D
E
F
.260 .220 .305 .077 .380
.280 .245 .320 .104 .400
DIMENSIONS IN MILLIMETERS
6.60 5.59 7.75 1.95 9.65
7.11 6.22 8.13 2.65 10.16
K
.025
.040
0.635
1.016
L
.030
.060
.760
1.520
MIN
MAX
MIN
MAX
(DO-214AB)
(DO-215AB)
Typical Standoff Height: 0.004” – 0.008” (0.1mm – 0.2mm)
PAD LAYOUT
SMCJ (DO-214AB)
A
B
C
INCHES
0.390
0.110
0.150
mm
9.90
2.79
3.81
SMCG (DO-215AB)
A
B
C
INCHES
0.510
0.110
0.150
mm
12.95
2.79
3.81
SYMBOLS & DEFINITIONS
Symbol
V
WM
P
PP
V
BR
I
D
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
Symbol
I
PP
V
C
Definition
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
BR
I
BR
RF01002 Rev A, June 2010
High Reliability Product Group
Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25
o
C
Reverse
Stand-Off
Voltage
V
WM
Breakdown Voltage
V
BR
@ I
BR
Maximum
Reverse
Leakage
I
D
@ V
WM
A
1000
500
250
100
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
V
C
@ I
PP
Maximum
Peak Pulse
Current I
PP
@10/1000
Maximum
Capacitance
@ 0 Volts,
f = 1 MHz
Working
Inverse
Blocking
Voltage
V
WIB
V
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
150
150
150
150
150
150
150
150
300
300
300
300
300
300
300
300
Inverse
Blocking
Leakage
Current
I
IB
A
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Peak
Inverse
Blocking
Voltage
V
PIB
V
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
MICROSEMI
PART NUMBER
GULL-WING
MSMCGLCE6.5A
MSMCGLCE7.0A
MSMCGLCE7.5A
MSMCGLCE8.0A
MSMCGLCE8.5A
MSMCGLCE9.0A
MSMCGLCE10A
MSMCGLCE11A
MSMCGLCE12A
MSMCGLCE13A
MSMCGLCE14A
MSMCGLCE15A
MSMCGLCE16A
MSMCGLCE17A
MSMCGLCE18A
MSMCGLCE20A
MSMCGLCE22A
MSMCGLCE24A
MSMCGLCE26A
MSMCGLCE28A
MSMCGLCE30A
MSMCGLCE33A
MSMCGLCE36A
MSMCGLCE40A
MSMCGLCE43A
MSMCGLCE45A
MSMCGLCE48A
MSMCGLCE51A
MSMCGLCE54A
MSMCGLCE58A
MSMCGLCE60A
MSMCGLCE64A
MSMCGLCE70A
MSMCGLCE75A
MSMCGLCE80A
MSMCGLCE90A
MSMCGLCE100A
MSMCGLCE110A
MSMCGLCE120A
MSMCGLCE130A
MSMCGLCE150A
MSMCGLCE160A
MSMCGLCE170A
J-BEND
MSMCJLCE6.5A
MSMCJLCE7.0A
MSMCJLCE7.5A
MSMCJLCE8.0A
MSMCJLCE8.5A
MSMCJLCE9.0A
MSMCJLCE10A
MSMCJLCE11A
MSMCJLCE12A
MSMCJLCE13A
MSMCJLCE14A
MSMCJLCE15A
MSMCJLCE16A
MSMCJLCE17A
MSMCJLCE18A
MSMCJLCE20A
MSMCJLCE22A
MSMCJLCE24A
MSMCJLCE26A
MSMCJLCE28A
MSMCJLCE30A
MSMCJLCE33A
MSMCJLCE36A
MSMCJLCE40A
MSMCJLCE43A
MSMCJLCE45A
MSMCJLCE48A
MSMCJLCE51A
MSMCJLCE54A
MSMCJLCE58A
MSMCJLCE60A
MSMCJLCE64A
MSMCJLCE70A
MSMCJLCE75A
MSMCJLCE80A
MSMCJLCE90A
MSMCJLCE100A
MSMCJLCE110A
MSMCJLCE120A
MSMCJLCE130A
MSMCJLCE150A
MSMCJLCE160A
MSMCJLCE170A
V
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
80
90
100
110
120
130
150
160
170
V
MIN
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
88.7
100
111
122
133
144
167
178
189
V
MAX
7.98
8.60
10.2
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
85.0
92.1
98.0
111
123
135
147
159
185
197
231
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
11.2
12.0
14.3
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.5
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
129
146
162
178
193
209
243
259
304
A
100
100
100
100
100
97
88
82
75
70
65
61
57
54
51
46
42
39
36
33
31
28.1
25.8
23.3
21.6
20.6
19.4
18.2
17.2
16.0
15.5
14.6
13.3
12.4
11.6
10.3
9.3
8.4
7.8
7.2
6.2
5.8
4.9
pF
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
90
90
90
90
90
90
90
90
90
90
90
90
90
NOTE 1:
TVS are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater
than the dc or continuous peak operating voltage level.
RF01002 Rev A, June 2010
High Reliability Product Group
Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
________________________________________________________________________________________________________________________________
GRAPHS
Peak Pulse Power (P
PP
) or Current (I
PP
)
in percent of 25
o
C rating
P
PP
– Peak Pulse Power – kW
tp – Pulse Time – sec
Test wave form parameters
T – Temperature –
C
º
tr
= 10
s,
tp = 1000
s
FIGURE 1
Peak Pulse Power vs. Pulse Time
FIGURE 2
Pulse Waveform
FIGURE 3
Derating curve
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional
low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In
applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low
capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low
capacitance and also have a higher reverse voltage rating than the TVS clamping voltage V
C
. The Microsemi recommended
rectifier part number for the application in Figure 5 is the “SMBJLCR80” or “SMBGLCR80” depending on the terminal configuration
desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for
both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional
configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
FIGURE 4
TVS with internal low
capacitance rectifier diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode
in parallel)
FIGURE 6
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
RF01002 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
Microchip MCU
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