Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20
| 参数名称 | 属性值 |
| 厂商名称 | SIEMENS |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE |
| 最长访问时间 | 70 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH |
| JESD-30 代码 | R-PDSO-G20 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | FAST PAGE DRAM |
| 内存宽度 | 1 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 20 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 4MX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 认证状态 | Not Qualified |
| 刷新周期 | 1024 |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| HYB514100BTL-70 | PT7V4050TATFB38.880/20.6208 | HYB514100BT-50 | HYB514100BT-70 | HYB514100BTL-50 | HYB514100BTL-60 | |
|---|---|---|---|---|---|---|
| 描述 | Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20 | PLL/Frequency Synthesis Circuit, | Fast Page DRAM, 4MX1, 50ns, CMOS, PDSO20 | Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20 | Fast Page DRAM, 4MX1, 50ns, CMOS, PDSO20 | Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 厂商名称 | SIEMENS | - | SIEMENS | SIEMENS | SIEMENS | SIEMENS |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE | - | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| 最长访问时间 | 70 ns | - | 50 ns | 70 ns | 50 ns | 60 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH |
| JESD-30 代码 | R-PDSO-G20 | - | R-PDSO-G20 | R-PDSO-G20 | R-PDSO-G20 | R-PDSO-G20 |
| 内存密度 | 4194304 bit | - | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | FAST PAGE DRAM | - | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| 内存宽度 | 1 | - | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | - | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | - | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | - | 20 | 20 | 20 | 20 |
| 字数 | 4194304 words | - | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | - | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | - | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 4MX1 | - | 4MX1 | 4MX1 | 4MX1 | 4MX1 |
| 输出特性 | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 1024 | - | 1024 | 1024 | 1024 | 1024 |
| 最大供电电压 (Vsup) | 5.5 V | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | - | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | - | YES | YES | YES | YES |
| 技术 | CMOS | - | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | GULL WING | - | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | - | DUAL | DUAL | DUAL | DUAL |
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Microchip MCU
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