BZT52C(B)2V4
THRU
BZT52C(B)75
SURFAC MOUNT ZENER DIODES
SOD-123
Silicon planar power zener diodies
Standard Zener voltage tolerance is 5% AND
SUFFIX "ZMM55B" FOR 2% of V
ZNOM
SUFFIX "ZMM55C" FOR 5% of V
ZNOM
0.022(0.55)
0.067(1.70)
0.055(1.40)
0.112(2.85)
0.110(2.55)
0.152(3.85)
0.140(3.55)
Case: SOD-123 Molded plastic
Weigh: 0.01grams(approx)
0.006(0.150)
MAX
0.004(0.100)
0.010(0.250)
MIN
0.053(1.35)
MAX.
Characteristic
Power Dissipation at Tamb=25
Z-current
Tremal Resistance Junction to Ambient Air
Junction temperature
Storage temperature range
Symbol
P
tot
Iz
R
th
J-A
Value
Units
W
(1)
0.41
See Table"Characteristic)
300
150
-65 to+150
(2)
K/W
T
J
Tstg
NOTE:
2
(1) Diode on ceramic substrate 0.7mm; 2.5mm area
(2) Valid provided that electrodes are kept at ambient temperature
SURFACE MOUNT ZENER DIODES BZT52C(B)2V4 THRU BZT52C(B)75
Nominal
Zener
Voltage
V
ZNOM
Volts
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT55C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
BZT52C56
BZT52C62
BZT52C68
BZT52C75
2.4
2.7
3.0
Device
Type
Nominal
Zener
Voltage
1)
Vz at Izt
Volts
2.28-2.56
2.5-2.9
2.8-3.2
3.1-3.5
3.4-3.8
3.7-4.1
4.0-4.6
4.4-5.0
4.8-5.4
5.2-6.0
5.8-6.6
6.4-7.2
7.0-7.9
7.7-8.7
8.5-9.6
9.4-10.6
10.4-11.6
11.4-12.7
12.4-14.1
13.8-15.6
15.3-17.1
16.8-19.1
18.8-21.2
20.8-23.3
22.8-25.6
25.1-28.9
28-32
31-35
34-38
37-41
40-46
44-50
48-54
52-60
58-66
64-72
70-79
Test
Current
IzT
(3)
Maximum Zener Impedance
R
Z j
at I
Z
T
f=1KHZ
R
Z j
at I
Z
K
F=1KHZ
IzK
Reverse Admissable Zerer
Current
(2)
Voltage
At
At
at
Tamb=45 Tamb=25
IR=0.1uA
Iz
Iz
Volts
Temp. Coeff.
Of Zener
current
at Iz=5mA
Vz10
-4
/K
TYP.-1.8
-9~-4
-9~-3
-8~-3
-8~-3
-7~-3
-6~-1
-5~+2
-3~+4
-2~+6
-1~+7
+2~+7
+3~+7
+4~+7
+5~+8
+5~+8
+5~+9
+6~+9
+7~+9
+7~+9
+8~+9.5
+8~+9.5
+8~+10
+8~+10
+8~+10
+8~+10
+8~+10
+8~+10
+8~+10
+10~+12
+10~+12
+10~+12
+10~+12
Type.+10
Type.+10
Type.+10
Type.+10
(4)
(4)
(4)
(4)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
85
75(<83)
80(<95)
80(<95)
80(<95)
80(<95)
80(<95)
70(<78)
30(<60)
10(<40)
4.8(<10)
4.5(<8)
4(<7)
4.5(<7)
4.8(<10)
5.2(<15)
6(<20)
7(<20)
9(<25)
11(<30)
13(<40)
18(<50)
20(<50)
25(<55)
28(<80)
30(<80)
35(<80)
40(<80)
40(<90)
50(<90)
60(<100)
70(<100)
70(<100)
<135
<150
<200
<250
600
<500
<500
<500
<500
<500
<500
<500
<480
<400
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<250
<250
<250
<250
<300
<700
<750
<750
<1000
<1000
<1000
<1500
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
-
-
-
-
113
98
92
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
-
-
-
-
-
>0.8
>1
>2
>3
>5
>6
>7
>7.5
>8.5
>9
>10
>11
>12
>14
>15
>17
>18
>20
>22.5
>25
>27
>29
>32
>35
>38
-
-
-
-
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
-
-
-
-
(1)Tighter tolerances available request :
BZT52B--- - 2% of V
ZNOM
BZT52C---- 5% of V
ZNOM
(
2)Vaild provild that electrodes are kept at ambient temperature
(3)Tested pulses tp=5ms
(4)at Iz=2.5mA
2
SURFACE MOUNT ZENER DIODES BZT52C(B)2V4 THRU BZT52C(B)75
Ptot-TOTAL POWER DISSIPATION
(W)
I
F
-FORWAR CURRENT(mA)
W
0.5
0.4
0.3
0.2
0.1
FIGURE.1-MAXIMUM ADMISSIBLE POWER
DISSIPATION CHARACTERISTICS
100
10
1
0.1
0.01
FIGURE.6-FORWARD CURRENT
CHARACTERISTICS
T
j
=100
T
j
=25
0
0
25
50
75
100 125 150 175 200
0.001
0
0.2
0.4
0.6
0.8
1.0
AMBIENT TEMPERATURE
V
F
,FORWARD VOLTAGE(V)
50
I
Z
-Z-CURRENT(mA)
40
30
20
FIGURE.3-BREAKDOWN CHARACTERISTICS
C2.7
C3.3
C3.9
C4.7
C8.2
T
j
=25
C5.6
C3.9 C6.8
I
Z
-Z-CURRENT(mA)
30
FIGURE.4-BREAKDOWN CHARACTERISTICS
C10
C12
C15
T
j
=25
C18
C22
20
At Iz=
10 5mA
C27
C33
C36
At Iz=2mA
10 At Iz=5mA
0
0
2
4
6
8
10
0
0
10
20
V
Z
,Z-VOLTAGE(V)
30
40
V
Z
,Z-VOLTAGE(V)
10
I
Z
-Z-CURRENT(mA)
8
6
4
2
FIGURE.5-BREAKDOWN CHARACTERISTICS
R
thA
-THERMAL RESISTANCE
FOR PULSE COND.(K/W)
C39
C43
C47
C51
At Iz=2mA
T
j
=25
20
30
40
50
60
1000
FIGURE.6-THERMAL RESISTANCE
CHARACTERISTICS
0.5
100
0.2
V=0
10
0.1
1
-5
10
0.05
0.01
0.02
-4
10
-3
10
-2
10
Tp
V=
T
-1
10
1
10
Tp
T
P
I
0
10
V
Z
,Z-VOLTAGE(V)
T
P
,PULSE LENGTH(s)
3
SURFACE MOUNT ZENER DIODES BZT52C(B)2V4 THRU BZT52C(B)75
R
Zj
-DYNAMIC RESISTANCE( )
R
Zj
-DYNAMIC RESISTANCE( )
1000
500
100
50
10
5
FIGURE.7-DYNAMIC RESISTANCE
100
50
T
j
=25
FIGURE.8-DYNAMIC RESISTANCE
C33
T
j
=25
C2.7
C5.6
10
5
C27
C22
C18
C15
C12
C6.8/8.2
C8.2
1
10
100
C3.6
C4.7
C5.1
10
100
1
0
1
1
0
I
Z
,Z-CURRENT(mA)
I
Z
,Z-CURRENT(mA)
R
Zj
-DYNAMIC RESISTANCE( )
100
70
50
40
30
20
FIGURE.9-DYNAMIC RESISTANCE
T
j
=25
1000
700
FIGURE.10-CAPACITANCE
T
j
=25
V
R
=1V
V
R
=2V
V
R
=1V
V
R
=2V
C
tot
-CAPACITANCE(
P
F)
500
400
300
200
10
7
5
4
3
2
100
70
50
40
30
20
C47~C51
C43
C39
C36
1
10
0
2
3
4 5
1
2
3
4 5
10
1
2
3
4 5
10
2
3
4 5
100
I
Z
,Z-CURRENT(mA)
V
Z
,Z-VOLTAGE(V)at Iz=5mA
R
Zj
-DYNAMIC RESISTANCE( )
1000
500
400
300
200
FIGURE.11-THERMAL DIFFERENTIAL RESISTANCE
R
th
=R
thA
.Vz.
Vz
Tj
100
70
50
40
30
20
FIGURE.12-DYNAMIC RESISTANCE
Rzth(K/W)
100
500
400
300
200
10
7
5
4
3
2
10
50
40
30
20
1
1
2
3
4 5
10
2
3
4 5
100
1
1
2
3
4 5
10
2
3
4 5
100
V
Z
,Z-VOLTAGE(V)at Iz=5mA
V
Z
,Z-VOLTAGE(V)at Iz=5mA
4
SURFACE MOUNT ZENER DIODES BZT52C(B)2V4 THRU BZT52C(B)75
10
25
20
Vz
( mV / K )
Tj
15
10
5
0
-5
1
FIGURE.13-TERMPERATURE DEPENDENCE
OF ZENER VOLTAGE
0.8
0.6
FIGURE.14-CHANGE OF ZENER VOLTAGE
CHARACTERISTICS
V
Z
,at Iz=5mA
C10
C15
C8
C7
C6.2
C5.9
C5.6
V
Z=
1mA
V
Z=
5mA
V
Z=
20mA
Vz(V)
C25
0.4
0.2
0
-0.2
0
C3.6
20
40
60
80
C5.1
C4.7
100 120 140
2
3
4 5
10
2
3
4 5
100
V
Z
,Z-VOLTAGE(V)at Iz=5mA
Vz 27v;Iz=2mA
JUNCTION TEMPERATURE
8
6
Vz(V)
4
2
0
-0.2
0
FIGURE.15-CHANGE OF ZENER VOLTAGE
CHARACTERISTICS
V
Z
,at Iz=2mA
C51
C43
Vz
( mV / K )
Tj
FIGURE.16-TERMPERATURE DEPENDENCE
OF ZENER VOLTAGE
100
Iz=5mA
80
60
40
20
0
C36
Iz=2mA
20
40
60
80
100 120 140
0
20
40
60
80
100
JUNCTION TEMPERATURE
V
Z
,Z-VOLTAGE(V)at Iz=2mA
FIGURE.15-CHANGE OF ZENER VOLTAGE
FROM TURN-ON UP TO THE
POINT OG THERMAL EQUILIBRIUM
5
Vz=R
thA
.Iz
4
Vz(V)
3
2
1
0
Iz=5mA
Vz(V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.2
FIGURE.15-CHANGE OF ZENER VOLTAGE
FROM TURN-ON UP TO THE
POINT OG THERMAL EQUILIBRIUM
Vz=R
thA
.Iz
Iz=5mA
Vz 27V;Iz=2mA
Iz=2mA
0
20
40
60
80
100
0.4
0
10
20
30
40
50
V
Z
,Z-VOLTAGE(V)at Iz=5mA
V
Z
,Z-VOLTAGE(V)at Iz=5mA
5
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