LS3250 SERIES
MONOLITHIC DUAL
NPN TRANSISTORS
*FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING
1
EXCELLENT THERMAL TRACKING
1
ABSOLUTE MAXIMUM RATINGS
2
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
C1
1
2
3
4
2mV
3µV/°C
B1
E2
B2
SOT-23
TOP VIEW
TOP VIEW
1
2
3
6
5
4
*SOT-23
TO-78
TOP VIEW
C1
E1
C2
-55 to +150 °C
-55 to +150 °C
TBD
50mA
50V
TO-71
TOP VIEW
PDIP
TOP VIEW
PDIP
8
7
6
5
SOIC
TOP VIEW
SOIC
C2
B2
E2
C1
B1
E1
1
2
3
4
8
7
6
5
C2
B2
E2
NC
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
B1
E1
NC
NC
NC
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL
V
BE1
V
BE2
CHARACTERISTIC
Base to Emitter Voltage Differential
Base to Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
Current Gain Differential
LS3250A
MIN
MAX
2
3
10
0.5
10
LS3250B
MIN
MAX
5
5
10
0.5
10
LS3250C
MIN
MAX
10
15
10
1.0
15
UNIT
mV
µV/°C
nA
nA/°C
%
CONDITIONS
I
C
= 10µA , V
CE
= 5V
I
C
= 10µA , V
CE
= 5V
T
A
= -40°C to +85°C
I
C
= 10µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
T
A
= -40°C to +85°C
I
C
= 1mA, V
CE
= 5V
V
BE1
V
BE2
ΔT
I
B1
I
B2
I
B1
I
B2
ΔT
h
FE1
h
FE2
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL
BV
CBO
BV
CEO
BV
CCO
BV
EBO
V
CE(SAT)
CHARACTERISTIC
Collector to Base Breakdown Voltage
LS3250A
MIN
45
MAX
LS3250B
MIN
40
40
±50
6.0
0.35
0.35
MAX
LS3250C
MIN
20
20
±50
6.0
1.2
V
MAX
UNIT
CONDITIONS
I
C
= 10µA , I
E
= 0A
I
C
= 10mA, I
B
= 0
I
C
= ±1µA, I
E
= I
B
= 0A
I
E
= 10µA, I
C
= 0A
I
C
= 10mA, I
B
= 1mA
Collector to Emitter Breakdown Voltage 45
Collector to Collector Breakdown
±50
Voltage
Emitter to Base Breakdown Voltage
3
6.0
Collector to Emitter Saturation Voltage
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201128 05/15/2014 Rev#A5 ECN# LS 3250
ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
LS3250A
MIN
150
h
FE
DC Current Gain
150
125
I
CBO
I
EBO
I
C1C2
C
OBO
f
T
NF
Collector Cutoff Current
Emitter Cutoff Current
Collector to Collector Leakage Current
Output Capacitance
Gain Bandwidth Product (Current)
Noise Figure (Narrow Band)
0.35
0.35
±1
2
600
3
650
MAX
LS3250B
MIN
100
80
60
0.35
0.2
0.35
±1
2
600
3
0.35
±1
2
600
3
µA
pF
MHz
dB
nA
MAX
LS3250C
MIN
50
40
30
MAX
UNIT
CONDITIONS
I
C
= 1mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 35mA, V
CE
= 5V
I
E
= 0A, V
CB
= 30V
I
E
= 0A, V
CB
= 20V
I
E
= 0A, V
CB
= 3V
V
CC
= ±50V, I
E
= I
B
= 0A
I
E
= 0A, V
CB
= 10V
I
C
= 1mA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V
BW = 200Hz
R
B
= 10Ω,
f
= 1kHz
SOT-23
SOT-23
0.95
TO-71
0.35
0.50
2.80
3.00
TO-78
0.060
1
2
PDIP
PDIP
8
7
0.100
1
1.90
6
5
0.375
2
0.210
0.170
0.038
3
4
6
5
3
4
1.50
1.75
2.60
3.00
0.09
0.20
0.250
*
0.90
1.30
0.145
0.170
0.295
0.320
DIMENSIONS IN
INCHES
SOIC
SOIC
0.00
0.15
0.10
0.60
DIMENSIONS IN
MILLIMETERS
0.014
0.018
1
2
8
7
0.050
0.189
0.196
0.021
3
4
6
5
0.150
0.157
*Standard package is SOT-23 6 lead. Other packages listed
are optional. Contact factory regarding availability of optional
packages.
0.0040
0.0098
0.2284
0.2440
DIMENSIONS IN
INCHES
0.0075
0.0098
NOTES
1.
2.
3.
Maximum rating for LS3250A, SOT23-6.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
The reverse Base to Emitter voltage must never exceed 6.0 Volts. The reverse Base to Emitter current must never exceed 10µA.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201128 05/15/2014 Rev#A5 ECN# LS 3250
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
