Preliminary
Datasheet
RJK1053DPB
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
R07DS0084EJ0102
(Previous: REJ03G1770-0101)
Rev.1.02
Jul 30, 2010
Low on-resistance
R
DS(on)
= 10 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Application
Switching Mode Power Supply
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-C
Tch
Tstg
Ratings
100
20
25
100
25
12.5
15.6
65
1.92
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(V
GS(off)
) which characteristics has been improved.
R07DS0084EJ0102 Rev.1.02
Jul 30, 2010
Page 1 of 6
RJK1053DPB
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
100
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
10
11
70
6160
508
193
0.5
43
19
12.5
13
5.6
68
9.0
0.83
52
Max
—
0.1
10
2.5
13
15
—
—
—
—
—
—
—
—
—
—
—
—
1.1
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0 V
V
GS
=
20
V, V
DS
= 0 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
I
D
= 12.5 A, V
GS
= 10 V
Note4
I
D
= 12.5A, V
GS
= 4.5 V
Note4
I
D
= 12.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 50 V, V
GS
= 4.5 V,
I
D
= 25 A
V
GS
= 10 V, I
D
= 12.5 A,
V
DD
30 V, R
L
= 2.4
,
Rg = 4.7
I
F
= 25 A, V
GS
= 0 V
Note4
I
F
= 25 A, V
GS
= 0 V
di
F
/ dt = 100 A/
s
R07DS0084EJ0102 Rev.1.02
Jul 30, 2010
Page 2 of 6
RJK1053DPB
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Tc = 25°C
1 shot Pulse
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
100
10
μs
0
μ
10
10
Operation in
1 this area is
PW = 10 ms
limited by R
DS(on)
0.1
0.01
0.1
s
40
1m
s
20
DC Operation
0
50
100
150
200
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
4.5 V, 10 V
3.0 V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
30
Drain Current I
D
(A)
40
40
2.8 V
30
20
20
Tc = 75°C
25°C
–25°C
10
V
GS
= 2.6 V
10
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
400
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation Voltage
V
DS (on)
(mV)
500
100
Pulse Test
300
I
D
= 20 A
V
GS
= 4.5 V
10
10 V
200
100
10 A
5A
0
4
8
12
16
20
1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0084EJ0102 Rev.1.02
Jul 30, 2010
Page 3 of 6
RJK1053DPB
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
I
D
= 12.5 A
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Ciss
Capacitance C (pF)
32
24
V
GS
= 4.5 V
10 V
1000
Coss
100
V
GS
= 0 V
f = 1 MHz
Crss
16
8
0
–25
10
0
25
50
75
100 125 150
0
10
20
30
40
50
Case Temperature Tc (
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Voltage V
GS
(V)
20
50
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
200
Reverse Drain Current I
DR
(A)
I
D
= 25 A
Pulse Test
5V
40
10 V
160
V
DD
= 50 V
25 V
10 V
V
DS
40
V
DD
= 50 V
25 V
10 V
0
20
40
60
80
16
V
GS
12
120
30
80
8
20
V
GS
= 0 V
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
20
I
AP
= 12.5 A
V
DD
= 50 V
duty < 0.1 %
Rg
≥
50
Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0084EJ0102 Rev.1.02
Jul 30, 2010
Page 4 of 6
RJK1053DPB
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.3
0.5
0.2
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
0.1
θch
– c = 1.92°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.03
0.05
2
0.0
lse
01
t pu
0.
o
h
1s
100
μ
0.01
10
μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0084EJ0102 Rev.1.02
Jul 30, 2010
Page 5 of 6
Microchip MCU
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