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NSS20200W6

产品描述20 V, 3.0 A, Low VCE(sat) PNP Transistor
文件大小99KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS20200W6概述

20 V, 3.0 A, Low VCE(sat) PNP Transistor

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NSS20200W6
20 V, 3.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
−20
−20
−7.0
−2.0
−3.0
Unit
Vdc
Vdc
Vdc
A
A
1
Symbol
P
D
(Note 1)
Max
426
3.4
R
qJA
(Note 1)
P
D
(Note 2)
293
555
4.4
R
qJA
(Note 2)
T
J
, T
stg
225
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
VC = Specific Device Code
M = Date Code
G
= Pb−Free Package
SC−88/SOT−363
CASE 419B
STYLE 20
http://onsemi.com
−20
VOLTS, 3.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
65 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
DEVICE MARKING
6
VC M
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces.
ORDERING INFORMATION
Device
NSS20200W6T1G
Package
SC−88
(Pb−Free)
Shipping
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2008
August, 2008
Rev. 2
1
Publication Order Number:
NSS20200W6/D
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