a
FEATURES
Initial Accuracy: 2 mV max
Temperature Coefficient: 5 ppm/°C max
Low Supply Current: 45 A max
Sleep Mode: 15 A max
Low Dropout Voltage
Load Regulation: 4 ppm/mA
Line Regulation: 4 ppm/V
High Output Current: 30 mA
Short Circuit Protection
APPLICATIONS
Portable Instrumentation
A-to-D and D-to-A Converters
Smart Sensors
Solar Powered Applications
Loop Current Powered Instrumentations
GENERAL DESCRIPTION
Precision Micropower, Low Dropout,
Voltage References
REF19x Series*
PIN CONFIGURATIONS
8-Lead Narrow-Body SO and TSSOP
(S Suffix and RU Suffix)
TP
V
S
SLEEP
GND
1
2
3
4
8
NC
NC
OUTPUT
TP
REF19x
SERIES
TOP VIEW
(Not to Scale)
7
6
5
8-Lead Epoxy DIP (P Suffix)
TP
V
S
SLEEP
1
2
3
4
8
NC
NC
OUTPUT
TP
REF19x
SERIES
TOP VIEW
(Not to Scale)
7
6
5
REF19x series precision bandgap voltage references utilize a
patented temperature drift curvature correction circuit and laser
trimming of highly stable thin-film resistors to achieve a very
low temperature coefficient and a high initial accuracy.
The REF19x series are micropower, Low Dropout Voltage
(LDV) devices providing a stable output voltage from supplies
as low as 100 mV above the output voltage and consuming less
than 45
µA
of supply current. In sleep mode, which is enabled
by applying a low TTL or CMOS level to the sleep pin, the out-
put is turned off and supply current is further reduced to less
than 15
µA.
The REF19x series references are specified over the extended
industrial temperature range (–40°C to +85°C) with typical per-
formance specifications over –40°C to +125°C for applications
such as automotive.
All electrical grades are available in 8-pin SOIC; the PDIP and
TSSOP are only available in the lowest electrical grade. Prod-
ucts are also available in die form.
*Protected
by U.S. Patent 5291122.
GND
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS
NO USER CONNECTION
Table I
Part Number
REF191
REF192
REF193
REF194
REF195
REF196
REF198
Nominal Output Voltage (V)
2.048
2.50
3.00
4.50
5.00
3.30
4.096
ORDERING GUIDE
Model
REF19xGP
REF19xES†
REF19xFS†
REF19xGS
REF19xGRU
REF19xGBC
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
+25°C
Package
Description
8-Pin Plastic DIP*
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin TSSOP
DICE
Package
Option
N-8
SO-8
SO-8
SO-8
TSSOP-8
*8-pin plastic DIP only available in “G” grade.
†REF193 and REF196 are available in “G” grade only.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
REF19x Series
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, T = +25 C unless otherwise noted)
S
A
Parameter
INITIAL ACCURACY
1
“E” Grade
“F” Grade
“G” Grade
LINE REGULATION
2
“E” Grade
“F & G” Grades
LOAD REGULATION
2
“E” Grade
“F & G” Grades
DROPOUT VOLTAGE
Symbol
V
O
Condition
I
OUT
= 0 mA
Min
2.046
2.043
2.038
Typ
2.048
Max
2.050
2.053
2.058
4
8
10
15
0.95
1.25
1.55
Units
V
V
V
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
mV
µV
p-p
∆V
O
/∆V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
2
4
4
6
∆V
O
/∆V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0
≤
I
OUT
≤
30 mA
V
S
= 3.0 V, I
LOAD
= 2 mA
V
S
= 3.3 V, I
LOAD
= 10 mA
V
S
= 3.6 V, I
LOAD
= 25 mA
1000 Hours @ +125°C
0.1 Hz to 10 Hz
LONG-TERM STABILITY
3
NOISE VOLTAGE
∆V
O
e
N
1.2
20
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125
°C,
with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, –40 C
≤
T
≤
+85 C unless otherwise noted)
S
A
Parameter
TEMPERATURE COEFFICIENT
1, 2
“E” Grade
“F” Grade
“G” Grade
3
LINE REGULATION
4
“E” Grade
“F & G” Grades
LOAD REGULATION
4
“E” Grade
“F & G” Grades
DROPOUT VOLTAGE
Symbol
TCV
O
/°C
Condition
I
OUT
= 0 mA
Min
Typ
2
5
10
5
10
5
10
Max
5
10
25
10
20
15
20
0.95
1.25
1.55
Units
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
V
µA
V
µA
µA
µA
∆V
O
/∆V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
∆V
O
/∆V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0
≤
I
OUT
≤
25 mA
V
S
= 3.0 V, I
LOAD
= 2 mA
V
S
= 3.3 V, I
LOAD
= 10 mA
V
S
= 3.6 V, I
LOAD
= 25 mA
2.4
SLEEP PIN
Logic High Input Voltage
Logic High Input Current
Logic Low Input Voltage
Logic Low Input Current
SUPPLY CURRENT
Sleep Mode
V
H
I
H
V
L
I
L
No Load
No Load
–8
0.8
–8
45
15
NOTES
1
For proper operation, a 1
µF
capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°C.
TCV
O
= (V
max–V min)/V
O
(T
MAX
–T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
–2–
REV. C
REF19x Series
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, –40 C
≤
T
≤
+125 C unless otherwise noted)
S
A
Parameter
TEMPERATURE COEFFICIENT
1, 2
“E” Grade
“F” Grade
“G” Grade
3
LINE REGULATION
4
“E” Grade
“F & G” Grades
LOAD REGULATION
4
“E” Grade
“F & G” Grades
DROPOUT VOLTAGE
Symbol
TCV
O
/°C
Condition
I
OUT
= 0 mA
Min
Typ
2
5
10
10
20
10
20
Max
Units
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
∆V
O
/∆V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
∆V
O
/∆V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0
≤
I
OUT
≤
20 mA
V
S
= 3.3 V, I
LOAD
= 10 mA
V
S
= 3.6 V, I
LOAD
= 20 mA
1.25
1.55
V
V
NOTES
1
For proper operation, a 1
µF
capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°C.
TCV
O
= (V
max–V min)/V
O
(T
MAX
–T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REV. C
–3–
REF19x Series
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, T = +25 C unless otherwise noted)
S
A
Parameter
INITIAL ACCURACY
1
“E” Grade
“F” Grade
“G” Grade
LINE REGULATION
2
“E” Grade
“F & G” Grades
LOAD REGULATION
2
“E” Grade
“F & G” Grades
DROPOUT VOLTAGE
LONG-TERM STABILITY
3
NOISE VOLTAGE
Symbol
V
O
Condition
I
OUT
= 0 mA
Min
Typ
Max
Units
V
V
V
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
mV
µV
p-p
2.498 2.500 2.502
2.495
2.505
2.490
2.510
2
4
4
6
4
8
10
15
1.00
1.40
1.2
25
∆V
O
/∆V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
∆V
O
/∆V
LOAD
V
S
– V
O
∆V
O
e
N
V
S
= 5.0 V, 0
≤
I
OUT
≤
30 mA
V
S
= 3.5 V, I
LOAD
= 10 mA
V
S
= 3.9 V, I
LOAD
= 30 mA
1000 Hours @ +125°C
0.1 Hz to 10 Hz
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125
°C,
with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, T = –40 C
≤
T
≤
+85 C unless otherwise noted)
S
A
A
Parameter
TEMPERATURE COEFFICIENT
1, 2
“E” Grade
“F” Grade
“G” Grade
3
LINE REGULATION
4
“E” Grade
“F & G” Grades
LOAD REGULATION
4
“E” Grade
“F & G” Grades
DROPOUT VOLTAGE
SLEEP PIN
Logic High Input Voltage
Logic High Input Current
Logic Low Input Voltage
Logic Low Input Current
SUPPLY CURRENT
Sleep Mode
Symbol
TCV
O
/°C
Condition
I
OUT
= 0 mA
Min
Typ
2
5
10
5
10
5
10
Max
5
10
25
10
20
15
20
1.00
1.50
Units
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
µA
V
µA
µA
µA
∆V
O
/∆V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
∆V
O
/∆V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0
≤
I
OUT
≤
25 mA
V
S
= 3.5 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 25 mA
2.4
V
H
I
H
V
L
I
L
No Load
No Load
–8
0.8
–8
45
15
NOTES
1
For proper operation, a 1
µF
capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°C.
TCV
O
= (V
max–V min)/V
O
(T
MAX
–T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
–4–
REV. C
REF19x Series
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, –40 C
≤
T
≤
+125 C unless otherwise noted)
S
A
Parameter
TEMPERATURE COEFFICIENT
1, 2
“E” Grade
“F” Grade
“G” Grade
3
LINE REGULATION
4
“E” Grade
“F & G” Grades
LOAD REGULATION
4
“E” Grade
“F & G” Grades
DROPOUT VOLTAGE
Symbol
TCV
O
/°C
Condition
I
OUT
= 0 mA
Min
Typ
2
5
10
10
20
10
20
Max
Units
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
∆V
O
/∆V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
∆V
O
/∆V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0
≤
I
OUT
≤
20 mA
V
S
= 3.5 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 20 mA
1.00
1.50
V
V
NOTES
1
For proper operation, a 1
µF
capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°C.
TCV
O
= (V
max–V min)/V
O
(T
MAX
–T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
INITIAL ACCURACY
1
“G” Grade
LINE REGULATION
2
“G” Grades
LOAD REGULATION
2
“G” Grade
DROPOUT VOLTAGE
LONG-TERM STABILITY
3
NOISE VOLTAGE
Symbol
V
O
∆
V
O
/
∆
V
IN
∆
V
O
/
∆
V
LOAD
(@ V
S
= 3.3 V, T
A
= +25 C unless otherwise noted)
Condition
I
OUT
= 0 mA
3.3 V,
≤
V
S
≤
15 V, I
OUT
= 0 mA
V
S
= 5.0 V, 0
≤
I
OUT
≤
30 mA
V
S
= 3.8 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 30 mA
1000 Hours @ +125°C
0.1 Hz to 10 Hz
1.2
30
Min
2.990
Typ
3.0
4
6
Max
3.010
8
15
0.80
1.00
Units
V
ppm/V
ppm/mA
V
V
mV
µV
p-p
V
S
– V
O
∆
V
O
e
N
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125
°C,
with an LTPD of 1.3.
Specifications subject to change without notice.
REV. C
–5–
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