MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
SI2301
Features
•
•
•
•
•
•
•
-20V,-2.8A, R
DS(ON)
=120mΩ@V
GS
=-4.5V
R
DS(ON)
=150mΩ@V
GS
=-2.5V
High dense cell design for extremely low R
DS(ON)
Rugged and reliable
High Speed Switching
SOT-23 Package
Marking Code: S1
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
DS
I
D
I
DM
V
GS
P
D
R
θ
JA
T
J
T
STG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient
b
Operating Junction Temperature
Storage Temperature
Rating
-20
-2.8
-10
±8
1.25
100
-55 to +150
-55 to +150
Unit
V
A
A
V
W
℃/W
℃
℃
3
1.GATE
C
B
2. SOURCE
3. DRAIN
1
F
E
2
G
K
H
J
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Internal Block Diagram
D
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
G
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
S
.037
.950
.037
.950
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Revision:
3
1
of
5
2008/01/15
MCC
TM
Micro Commercial Components
SI2301
T
A
= 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= -0.75A
V
DS
= -6V, I
D
= -2.8A,
V
GS
= -4.5V
V
DD
= -6V, I
D
= -1A,
V
GS
= -4.5V, R
GEN
= 6Ω
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= 8V, V
DS
= 0V
V
GS
= -8V, V
DS
= 0V
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
DS
= -5V, I
D
= -2.8A
-0.45
80
110
8
880
270
175
11
5
32
23
11
1.5
2.1
-0.75
-1.2
20
10
65
45
14.5
120
150
Min
-20
-1
100
-100
Typ
Max
Units
V
µA
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
d
d
c
nA
nA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Gate Threshold Voltage
V
DS
= -6V, V
GS
= 0V,
f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
www.mccsemi.com
Revision:
3
2
of
5
2008/01/15
MCC
TM
Micro Commercial Components
SI2301
10
25 C
10
-V
GS
=4.5,4,3,V
-I
D
, Drain Current (A)
8
-V
GS
=2.5V
6
-I
D
, Drain Current (A)
8
6
4
-V
GS
=2.0V
4
2
0
0
1
2
3
-V
GS
=1.5V
2
T
J
=125 C
0
-55 C
1.5
2.0
2.5
3.0
4
5
0.0
0.5
1.0
-V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
600
400
200
0
0
2
4
6
8
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
C, Capacitance (pF)
Ciss
Coss
Crss
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
I
D
=-2.8A
V
GS
=-4.5V
-50
0
50
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
-I
S
, Source-drain current (A)
V
GS
=0V
1
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=-250µA
10
10
0
10
-25
0
25
50
75
100
125
150
-1
0.2
0.4
0.6
0.8
1.0
1.2
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
-V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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Revision:
3
3
of
5
2008/01/15
MCC
TM
Micro Commercial Components
SI2301
10
2
-V
GS
, Gate to Source Voltage (V)
5 V =-6V
DS
I
D
=-2.8A
4
-I
D
, Drain Current (A)
10
1
R
DS(ON)
Limit
1ms
10ms
100ms
1s
DC
3
10
0
2
10
-1
1
0
0
3
6
9
12
10
-2
T
A
=25 C
T
J
=150 C
Single Pulse
-1
10
10
0
10
1
10
2
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
-V
DS
, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
V
DD
t
on
V
IN
D
V
GS
R
GEN
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective
Transient Thermal Impedance
D=0.5
0.2
10
-1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P* R
JA
(t)
4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
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Revision:
3
4 of
5
2008/01/15
MCC
Micro Commercial Components
TM
***IMPORTANT NOTICE***
Micro Commercial Components Corp
.
reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp
.
does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold
Micro Commercial Components Corp
.
and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by
Micro Commercial Components Corp
.
are not intended for use in Medical,
Aerospace or Military Applications.
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Revision:
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2008/01/15
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