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MMSTA42

产品描述200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
产品类别半导体    分立半导体   
文件大小67KB,共2页
制造商MCC
官网地址http://www.mccsemi.com
下载文档 详细参数 选型对比 全文预览

MMSTA42概述

200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR

200 mA, 300 V, NPN, 硅, 小信号晶体管

MMSTA42规格参数

参数名称属性值
端子数量3
晶体管极性NPN
最大集电极电流0.2000 A
最大集电极发射极电压300 V
加工封装描述ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子涂层MATTE TIN
端子位置DUAL
包装材料PLASTIC/EPOXY
结构SINGLE
元件数量1
晶体管应用SWITCHING
晶体管元件材料SILICON
最大环境功耗0.2000 W
晶体管类型GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数40
额定交叉频率50 MHz

文档预览

下载PDF文档
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMSTA42
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-small surface mount package
Marking : K3M
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
NPN Small Signal
Transistors
SOT-323
A
D
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
(1) (3)
Power dissipation
(1)
Junction Temperature
Storage Temperature
O
Rating
300
300
6.0
200
200
-55 to +150
-55 to +150
Min
300
300
6.0
---
---
Max
---
---
---
100
100
Unit
V
V
V
mA
mW
O
C
O
C
Units
G
C
B
C
B
F
E
E
Electrical Characteristics @ 25 C Unless Otherwise Specified
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CB
=200Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
CE
=6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=10Vdc)
(I
C
=30mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=20mAdc, I
B
=2.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=20mAdc, I
B
=2.0mAdc)
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Vdc
H
J
K
Vdc
Vdc
nAdc
nAdc
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
NOTE
ON CHARACTERISTICS
(2)
h
FE
25
40
40
---
---
---
---
---
0.5
0.9
---
---
---
Vdc
Vdc
Suggested Solder
Pad Layout
0.70
V
CE(sat)
V
BE(sat)
0.90
SMALL SIGNALCHARACTERISTICS
Current-Gain-Bandwidth Product
50
---
(V
CE
=20V, f=100MHz, I
C
=10mA)
C
CB
Collector-Base Capacitance
---
3.0
(V
CB
=20V, f=1.0MHz, I
E
=0)
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width<300us, duty cycle<2%
3. When operated within safe operating area constraints.
f
T
MHz
pF
0.65
0.65
1.90
www.mccsemi.com
Revision: 4
1 of 2
2008/01/01

MMSTA42相似产品对比

MMSTA42 MMSTA42-TP
描述 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
端子数量 3 3
晶体管极性 NPN NPN
最大集电极电流 0.2000 A 0.2000 A
最大集电极发射极电压 300 V 300 V
加工封装描述 ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3 ROHS COMPLIANT, ULTRA SMALL, PLASTIC, PACKAGE-3
无铅 Yes Yes
欧盟RoHS规范 Yes Yes
状态 ACTIVE ACTIVE
包装形状 RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes
端子形式 GULL WING GULL WING
端子涂层 MATTE TIN MATTE TIN
端子位置 DUAL DUAL
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY
结构 SINGLE SINGLE
元件数量 1 1
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
最大环境功耗 0.2000 W 0.2000 W
晶体管类型 GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数 40 40
额定交叉频率 50 MHz 50 MHz

 
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