<:3£.ml-L~onau.ctoi iJ^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUY82
MECHANICAL DATA
Dimensions in mm(lnches)
NPN SILICON PLANAR EPITAXIAL
TRANSISTOR IN HERMETICALLY
SEALED METAL CASE
2
1
3
TO39 PACKAGE(TO205AD)
Pin 1 = Emitter
Pin 2 = Base
Pin 3
-
Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
Maximum Collector to Base Continuous Voltage
Maximum Collector to Emitter Continous voltage
Maximum Emitter to Base Continouse reverse Voltage
Maximum Continuous Collector Current
Maximum Continuous Base Current
Maximum total Power Dissipation up to T
case
= 25°C
T
case
=100°C
T
amb
=
150V
60V
7V
10A
2A
30W
15W
1W
"c
IB
P
TOT
25°C
T
c
T
stg
Junction Temperature
Storage Temperature
-65to+175°C
150°C
Quality Semi-Conductors
BUY82
THERMAL CHARACTERISTICS
R
th j-case
R
th j-amb
Thermal resistance to case
Thermal resistance juntion to ambient
Max
Max
5.0°C/W
150°C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Static value of common-emitter
forward current transfer ratio *
V
CE(SAT>
Test Conditions
V
CE
= 5V
V
CE
= 5v
|
-
1QA
Min.
40
15
Typ. Max. Unit
I
C
=1.5A
I
C
=10A
I
R
= 5V
Collector-Emitter Saturation Voltage*
Base - Emitter Saturation Voltage*
Collector - Base Cut-off Current
Emitter - Base Cut-off Current
Turn on time
Turn off time
Output capacitance
Input capacitance
Transition Frequency
1.0
0.8
1.8
1.2
10
500
10
1
1.5
1
1
200
pF
850
40
MHz
us
uA
V
I
C
=1.5A
I
C
= 10A
^~>
I
B
= 150mA
I
B
=1.0A
O
V
BE(SAT)
I
C
=1.5A
V
CB
=100V
I
B
= 150mA
I
E
= 0
Tease =150°C
l
\_tO\J
rR
o
I
EBO
t
on
t
off
C
2
2b
C
11b
f
T
V
EB
= 5V
l
c
= 0
\
Vj
5A
I
B1
=
D I
0.5A
|~ = 10A
lf> = 5A
^
l
B
i = 1A
I
D 1
= - loo =0.5A
R1
LJ£.
I
C
=10A
V
CB
= iov
f=1MHz
V
EB
= 0.5V
I
B1
= -I
B 2 =
1A
i
E
= 0
l
c
=0
f=1MHz
V
CE
= iov
f = 20MHz
i
c
= 100mA
* Measured under pulse conditions: Pulse length = 300 ms, duty cycle - 1.5%
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
