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TB28F800B5-T90

产品描述1MX8 FLASH 5V PROM, 90ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
产品类别存储    存储   
文件大小471KB,共38页
制造商Intel(英特尔)
官网地址http://www.intel.com/
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TB28F800B5-T90概述

1MX8 FLASH 5V PROM, 90ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44

TB28F800B5-T90规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码SOIC
包装说明0.525 X 1.110 INCH, PLASTIC, SOP-44
针数44
Reach Compliance Codeunknow
最长访问时间90 ns
其他特性CAN BE CONFG AS 512K X 16; TOP BOOT BLOCK
备用内存宽度8
启动块TOP
命令用户界面YES
数据轮询NO
耐久性10000 Write/Erase Cycles
JESD-30 代码R-PDSO-G44
JESD-609代码e0
长度28.2 mm
内存密度8388608 bi
内存集成电路类型FLASH
内存宽度8
功能数量1
部门数/规模1,2,1,7
端子数量44
字数1048576 words
字数代码1000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1MX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP44,.63
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
编程电压5 V
认证状态Not Qualified
座面最大高度2.95 mm
部门规模16K,8K,96K,128K
最大待机电流0.000008 A
最大压摆率0.07 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术MOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
切换位NO
类型NOR TYPE
宽度13.3 mm
Base Number Matches1

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PRODUCT PREVIEW
SMART 5 BOOT BLOCK
FLASH MEMORY FAMILY
2, 4, 8 MBIT
28F200B5, 28F400B5, 28F800B5
SmartVoltage Technology
Smart 5 Flash: 5V Reads,
5V or 12V Writes
Increased Programming Throughput
at 12V V
PP
Very High-Performance Read
2-, 4-Mbit: 60 ns Access Time
8-Mbit: 70 ns Access Time
x8/x16-Configurable Input/Output Bus
Low Power Consumption
Max 60 mA Read Current at 5V
Auto Power Savings: <1 mA Typical
Standby Current
Optimized Array Blocking Architecture
16-KB Protected Boot Block
Two 8-KB Parameter Blocks
96-KB and 128-KB Main Blocks
Top or Bottom Boot Locations
Extended Temperature Operation
–40°C to +85°C
Industry-Standard Packaging
44-Lead PSOP, 48-Lead TSOP
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Extended Block Erase Cycling
100,000 Cycles at Commercial Temp
10,000 Cycles at Extended Temp
Hardware Data Protection Feature
Absolute Hardware-Protection for
Boot Block
Write Lockout during Power
Transitions
Automated Word/Byte Program and
Block Erase
Command User Interface
Status Registers
Erase Suspend Capability
SRAM-Compatible Write Interface
Reset/Deep Power-Down Input
Provides Low-Power Mode and
Reset for Boot Operations
Pinout Compatible 2, 4, and 8 Mbit
ETOX™ Flash Technology
0.6
µ
ETOX IV Initial Production
0.4
µ
ETOX V Later Production
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Intel’s word-wide Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring
high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their
asymmetrically-blocked architecture, flexible voltage, and extended cycling provide highly flexible
components suitable for embedded code execution applications, such as networking infrastructure and office
automation.
Based on Intel’s boot block architecture, the word-wide Smart 5 boot block memory family enables quick and
easy upgrades for designs that demand state-of-the-art technology. This family of products comes in
industry-standard packages: the 48-lead TSOP, ideal for board-constrained applications, and the rugged,
easy to handle 44-lead PSOP.
December 1996
Order Number: 290599-003

 
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