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MMBTA92

产品描述500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
产品类别半导体    分立半导体   
文件大小125KB,共3页
制造商MCC
官网地址http://www.mccsemi.com
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MMBTA92概述

500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR

500 mA, 300 V, PNP, 硅, 小信号晶体管

MMBTA92规格参数

参数名称属性值
端子数量3
晶体管极性PNP
最大集电极电流0.5000 A
最大集电极发射极电压300 V
无铅Yes
状态ACTIVE
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子涂层MATTE 锡
端子位置
包装材料塑料/环氧树脂
结构单一的
元件数量1
晶体管应用放大器
晶体管元件材料
晶体管类型通用小信号
最小直流放大倍数25
额定交叉频率50 MHz

文档预览

下载PDF文档
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMBTA92
Features
Surface Mount SOT-23 Package
Capable of 300mWatts of Power Dissipation
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
PNP Silicon High
Voltage Transistor
SOT-23
A
D
Marking:2D
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=-1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-100µAdc, I
C
=0)
Collector Current-Continuous
Collector Cutoff Current
(V
CB
=-200Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=-5Vdc, I
C
=0)
DC Current Gain*
(I
C
=-1.0mAdc, V
CE
=-10Vdc)
(I
C
=-10mAdc, V
CE
=-10Vdc)
(I
C
=-30mAdc, V
CE
=-10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=-20mAdc,I
B
=-2.0mAdc)
Current Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-20Vdc, f=30MHz)
Collector-Base Capacitance
(V
CB
=-20Vdc, I
E
=0, f=1.0MHz)
Min
-300
-300
-5
-300
-250
-100
Max
Units
Vdc
O
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
I
CBO
I
EBO
Vdc
Vdc
mAdc
nAdc
G
F
E
C
C
B
B
E
H
nAdc
K
DIMENSIONS
ON CHARACTERISTICS
h
FE
60
100
60
200
DIM
A
B
C
D
E
F
G
H
J
K
V
CE(sat)
V
BE(sat)
-0.2
-0.9
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
C
cb
50
6.0
MHz
pF
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
qJA
PD
556
300
2.4
R
qJA
TJ, Tstg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
.035
.900
Suggested Solder
Pad Layout
.031
.800
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision:
5
1 of 3
2009/06/10

 
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