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GBU10B: 产品描述10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE; 产品类别半导体分立半导体; 文件大小134KB，共3页; 制造商MCC; 官网地址http://www.mccsemi.com

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GBU10B概述

10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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MCC

Micro Commercial Components

omponents

20736 Marilla Street Chatsworth

!"#

$ % !"#

GBU10A

THRU

GBU10M

10 Amp Single Phase

Glass Passivated

Bridge Rectifiers

50 to 1000 Volts

GBU

•

Features

UL Recognized File # E165989

Glass Passivated Chip junction

High Surge Overload Rating

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix

designates RoHS Compliant. See ordering information)

•

Maximum Ratings

Operating Temperature: -55 to +150

Storage Temperature: -55 to +150

Typical Thermal Resistance:2.2 /W Junction to

Case(Heatsink)

MCC

Part Number

GBU10A

GBU10B

GBU10D

GBU10G

GBU10J

GBU10K

GBU10M

Maximum

Recurrent

Peak Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS Voltage

35V

70V

140V

280V

420V

560V

700V

Maximum DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

Case Style

1.90 RADIUS

3.2x45

I B

Electrical Characteristics @ 25

Maximum Average

Forward Current

(with heatsink Note

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

t Rating for Fusing

Notes:

Unless Otherwise Specified

10 A

= 100

DIM

F(AV)

DIMENSIONS

INCHES

MIN

.860

.720

.130

.690

.030

.018

.290

.140

.065

.089

.077

.040

.190

MAX

MIN

.880

21.80

.740

18.30

.140

3.30

.710

17.50

.039

0.76

.022

0.46

.310

7.40

.160

3.50

.085

1.65

.108

2.25

.093

1.95

.050

1.02

.210

4.83

7.0 TYPICAL

FSM

200A

1.1V

8.3ms, half sine

At 5A DC

5.0uA

500uA

70pF

200A

= 25

= 125

Measured at

1.0MHz, V

=4.0V

t<8.3ms

MAX

22.30

18.80

3.56

18.00

1.00

0.56

7.90

4.10

2.16

2.75

2.35

1.27

5.33

NOTE

High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7

Revision: 6

www.mccsemi.com

1 of 3

2008/03/24

GBU10B相似产品对比

	GBU10B	GBU10B-BP	GBU10G	GBU10A	GBU10D	GBU10M-BP	GBU10J	GBU10K	GBU10M
描述	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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