Operating Temperature Range .......................... -40NC to +85NC
Maximum Junction Temperature.....................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Soldering Temperature (Reflow) ....................................... 260NC
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +2.8V to +5.5V, T
A
= T
J
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= +3.3V, T
A
= +25NC, unless
otherwise noted.) (Note 2)
PARAMETER
Power-Supply Voltage
SYMBOL
V
CC
V
CB0
= V
CB
= V
CC
V
CB0
= 0V, V
CB
= V
CC
External resistors used,
V
CB0
= V
CB
= 0V or
V
CB0
= V
CC
, V
CB
= 0V
Internal resistors used,
V
CB0
= V
CB
= 0V or
V
CB0
= V
CC
, V
CB
= 0V
V
CB0
= V
CB
= V
CC
V
CB0
= 0V, V
CB
= V
CC
External resistors used,
V
CB0
= V
CB
= 0V or
V
CB0
= V
CC
, V
CB
= 0V
Internal resistors used,
V
CB0
= V
CB
= 0V or
V
CB0
= V
CC
, V
CB
= 0V
Supply Current Increase
Analog Signal Range
ANALOG SWITCH
On-Resistance TDP/TDM
Switch
On-Resistance Match
Between Channels TDP/TDM
Switch
R
ONT
0V
P
V
DP/DM
P
V
CC
, I
DP
or I
DM
= 10mA
4
6.5
I
DI
CC
V
DP
, V
DM
0V
P
V
CB_
P
V
IL
or V
IH
P
V
CB_
P
V
CC
0
CONDITIONS
MIN
2.8
0.7
6.5
7
TYP
MAX
5.5
2
10
12
UNITS
V
V
CC
= 3.3V
76
2.5
8.5
9
120
7
15
16
FA
Supply Current
I
CC
V
CC
= 5.5V
125
180
2
V
CC
FA
V
DR
ONT
V
DP
= V
DM
= 400mV, I
DP
or I
DM
= 10mA
0.1
I
2
USB Host Charger Identification Analog Switch
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +2.8V to +5.5V, T
A
= T
J
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= +3.3V, T
A
= +25NC, unless
otherwise noted.) (Note 2)
PARAMETER
On-Resistance Flatness TDP/
TDM Switch
On-Resistance RDP/RDM
Switch
On-Resistance Flatness RDP/
RDM Switch
On-Resistance of DP/DM
Short
TDP/TDM Off-Leakage
Current
DP/DM On-Leakage Current
DYNAMIC PERFORMANCE
Turn-On Time
Turn-Off Time
TDP/TDM Switch Propagation
Delay
Output Skew Between
Switches
TDP/TDM Off-Capacitance
DP/DM On-Capacitance
(Connected to TD_ )
-3dB Bandwidth
Off-Isolation
Crosstalk
INTERNAL RESISTORS
DP/DM Short Pulldown
RP1/RP2 Ratio
RP1 + RP2 Resistance
RM1/RM2 Ratio
RM1 + RM2 Resistance
R
PD
RT
RP
R
RP
RT
RM
R
RM
350
1.485
93.75
0.854
69.75
500
1.5
125
0.863
93
700
1.515
156.25
0.872
116.25
kI
Ratio
kI
Ratio
kI
t
ON
t
OFF
t
PLH
, t
PHL
t
SK(O)
C
OFF
C
ON
BW
V
ISO
V
CT
V
TDP
or V
TDM
= 1.5V, R
L
= 300I,
C
L
= 35pF, V
IH
= V
CC
, V
IL
= 0V, Figure 1
V
TDP
or V
TDM
= 1.5V, R
L
= 300I,
C
L
= 35pF, V
IH
= V
CC
, V
IL
= 0V, Figure 1
R
L
= R
S
= 50I
Skew between DP and DM when connected
to TDP and TDM, R
L
= R
S
= 50I, Figure 2
f = 1MHz, V
BIAS
= 0V, V
SIGNAL
= 500mV
P-P
(Note 3)
f = 240MHz, V
BIAS
= 0V,
V
SIGNAL
= 500mV
P-P
R
L
= R
S
= 50I
V
TDP
, V
DP
= 0dBm, R
L
= R
S
= 50I,
f = 250MHz, Figure 3
V
TDP
, V
DP
= 0dBm, R
L
= R
S
= 50I,
f = 250MHz, Figure 3
20
2.5
60
40
2.0
4.0
1000
-20
-25
5.5
100
5
Fs
Fs
ps
ps
pF
pF
MHz
dB
dB
SYMBOL
R
FLATT
R
ONR
R
FLATR
R
SHORT
I
TDPOFF
,
I
TDMOFF
I
DPON
,
I
DMON
CONDITIONS
V
DP
= V
DM
, 0V
P
V
DP
P
V
CC
,
I
DP
= I
DM
= 10mA
0.4V
P
V
RDP/RDM
P
V
CC
, I
RDP
= I
RDM
=
10mA
V
RDP
= V
RDM
, 0.4V
P
V
RDP
P
V
CC
,
I
RDP
= I
RDM
= 10mA
V
CB0
= 0V, V
CB
= V
CC
, V
DP
= V
DM
,
0V
P
V
DP
P
V
CC
, I
DP
= I
DM
= 1mA
V
CC
= 5.5V, V
CB0
= V
CC
, V
CB
= 0V, V
DP
=
V
DM
= 5.5V to 0V, V
TDP
= V
TDM
= 0V to 5.5V
V
CC
= 5.5V, V
CB0
= V
CB
= V
CC
,
V
DP
= V
DM
= 5.5V to 0V
-250
MIN
TYP
0.1
4
0.1
50
70
7.5
MAX
UNITS
I
I
I
I
MAX14550E
+250
nA
-250
+250
nA
3
USB Host Charger Identification Analog Switch
MAX14550E
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +2.8V to +5.5V, T
A
= T
J
= -40NC to +85NC, unless otherwise noted. Typical values are at V
CC
= +3.3V, T
A
= +25NC, unless
otherwise noted.) (Note 2)
PARAMETER
COMPARATORS
DM Comparator Threshold
DP and RDP Comparator
Threshold
DM Comparator Hysteresis
DP and RDP Comparator
Hysteresis
DM Comparator Debounce
Time
DP Comparator Debounce
Time
DIGITAL I/O (CB0, CB1)
Input Logic Voltage High
Input Logic Voltage Low
Input Logic Hysteresis
Input Leakage Current
ESD PROTECTION
All Pins
ESD Protection Level (DP and
DM Only)
Human Body Model
Human Body Model
Q2
Q15
kV
kV
V
IH
V
IL
V
HYST
I
IN
V
CC
= 5.5V, 0V
P
V
CB_
P
V
IL
or
V
IH
P
V
CB_
P
V
CC
-250
100
+250
1.4
0.4
V
V
mV
nA
t
DM
t
DP
V
DM
from 2.8V to 1.5V
V
DP
from 0.7V to 0V
30
30
V
DMF
V
DPR
V
RDP
> 0.4V, DM falling
V
RDP
< 0.3V, DM falling
DP or RDP falling
1.9
44
0.3
2.1
45
0.35
1
1
100
100
200
200
2.3
46
0.4
V
%V
CC
V
%V
DMF
%V
DPR
Fs
Fs
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Note 2:
All devices are 100% production tested at T
A
= +25NC. Specifications over temperature are guaranteed by design.
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