电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IHER801

产品描述Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, PLASTIC, ITO-220A, 2 PIN
产品类别分立半导体    二极管   
文件大小25KB,共2页
制造商Rectron
标准  
下载文档 详细参数 全文预览

IHER801概述

Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, PLASTIC, ITO-220A, 2 PIN

IHER801规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Rectron
零件包装代码TO-220AC
包装说明PLASTIC, ITO-220A, 2 PIN
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流200 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)265
认证状态Not Qualified
最大重复峰值反向电压50 V
最大反向恢复时间0.05 µs
表面贴装NO
端子面层MATTE TIN
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
IHER801
THRU
IHER805
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes
FEATURES
*
*
*
*
*
*
Low switching noise
Low forward voltage drop
Low thermal resistance
High current capability
High fast switching capability
High surge capability
.185(4.7)
.169(4.3)
.134(3.4)
.110(2.8)
ITO-220A
.138(3.5)
.122(3.1)
MECHANICAL DATA
*
*
*
*
*
Case: ITO-220A molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 2.24 grams
.114(2.9)
.098(2.5)
.406(10.3)
.382(9.7)
.04MAX.
(1.0)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.020(0.5)
.108(2.75)
.091(2.30)
.602(15.3)
.579(14.7)
.154 (3.9)
.138 (3.5)
.531(13.5)
.492(12.5)
.114(2.9)
.098(2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.031(0.8)
.016 (0.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
C
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JC
C
J
T
J
, T
STG
IHER801
IHER802
IHER803
IHER804
IHER805
UNITS
Volts
Volts
Volts
Amps
Amps
0
50
35
50
100
70
100
200
140
200
8.0
200
2.5
40
-55 to + 150
300
210
300
400
280
400
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
@T
C
= 25
o
C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
=- 0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. Suffix “R” for Reverse Polarity.
@T
C
= 100
o
C
SYMBOL
V
F
I
R
trr
IHER801
IHER802
IHER803
IHER804
IHER805
o
UNITS
Volts
uAmps
nSec
2003-1
1.0
10
150
50
1.3

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2286  2389  2901  2678  1358  54  45  19  49  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved