Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non−repetitive.
2. 1″ square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
V
RWM
(Note 5)
Volts
I
R
@
V
RWM
mA
Breakdown Voltage
V
BR
(Volts)
(Note 6)
Min
Nom
Max
@ I
T
mA
V
C
@ I
PP
(Note 7)
V
C
Volts
I
PP
Amps
C Typ.
(Note 8)
pF
V
F
@ I
F
(Note 9)
Max
V
Device
Device
Marking
NSA5.0AT3G
QA
5.0
400
6.4
6.7
7.0
10
9.2
43.5
2450
3.5
5. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
7. Surge current waveform per Figure 2 and derate per Figure 3.
8. Bias voltage = 0 V, F = 1.0 MHz, T
J
= 25°C.
9. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive, I
F
= 30 A.
http://onsemi.com
2
NSA5.0AT3G
RATING AND TYPICAL CHARACTERISTIC CURVES
100
Ippm, PEAK PULSE CURRENT (%)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2.
T
A
= 25°C
120
≤
10
ms
100
80
60
40
20
0
0.001
0.01
0.1
t
P
, PULSE WIDTH (ms)
1
10
PEAK VALUE
I
ppm
T
A
= 25°C
PW (I
D
) IS DEFINED AS THE
POINT WHERE THE PEAK CURRENT
DECAYS TO 50% OF I
pp
.
Ppk , PEAK POWER (kW)
10
HALF VALUE - I
pp
/2
10/1000
ms
WAVEFORM
AS DEFINED BY R.E.A.
t
d
0
1
2
3
t, TIME (ms)
4
5
1
0.1
10
-4
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
120
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
100
80
60
40
20
0
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
10,000
NSA5.0A
C, CAPACITANCE (pF)
1,000
T
J
= 25°C
F = 1 MHz
100
10
1
0
40
80
120
160
T
A
, AMBIENT TEMPERATURE (°C)
200
1
10
BIAS VOLTAGE (VOLTS)
100
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
PD , MAXIMUM POWER DISSIPATION (WATTS)
6
5
4
3
2
1
0
0
25
50
100
75
T, TEMPERATURE (°C)
125
150
@ T
A
= 25°C
P
D
= 0.5 W
@ T
L
= 75°C
P
D
= 1.5 W
Figure 5. Steady State Power Derating
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3
NSA5.0AT3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE E
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
A1
L
c
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
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For additional information, please contact your local
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