Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | TT Electronics plc |
| 包装说明 | CHIP CARRIER, R-XBCC-N3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 480 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 45 A |
| 最大漏源导通电阻 | 0.031 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-XBCC-N3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 180 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| IRFN054 | IRFN054-JQR-BR4 | IRFN054-JQR-B | IRFN054R4 | IRFN054SM | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN | Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN | Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN | Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN |
| 厂商名称 | TT Electronics plc | TT Electronics plc | TT Electronics plc | TT Electronics plc | TT Electronics plc |
| 包装说明 | CHIP CARRIER, R-XBCC-N3 | UNCASED CHIP, R-XUUC-N3 | CHIP CARRIER, R-XBCC-N3 | CHIP CARRIER, R-XBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 480 mJ | 480 mJ | 480 mJ | 480 mJ | 480 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V |
| 最大漏极电流 (ID) | 45 A | 45 A | 45 A | 45 A | 45 A |
| 最大漏源导通电阻 | 0.031 Ω | 0.031 Ω | 0.031 Ω | 0.031 Ω | 0.031 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-XBCC-N3 | R-XUUC-N3 | R-XBCC-N3 | R-XBCC-N3 | R-CBCC-N3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | UNCASED CHIP | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 180 A | 180 A | 180 A | 180 A | 180 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | BOTTOM | UPPER | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 | 符合 | - |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
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