Power Field-Effect Transistor, 5.5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
参数名称 | 属性值 |
厂商名称 | Vishay(威世) |
包装说明 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
配置 | SINGLE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 5.5 A |
最大漏源导通电阻 | 0.4 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-205 |
JESD-30 代码 | O-MBCY-W3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | METAL |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | P-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | WIRE |
端子位置 | BOTTOM |
晶体管元件材料 | SILICON |
IRFF9133 | IRFF9130 | IRFF9132 | IRFF9131 | |
---|---|---|---|---|
描述 | Power Field-Effect Transistor, 5.5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | Power Field-Effect Transistor, 6.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 |
包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 60 V | 100 V | 100 V | 60 V |
最大漏极电流 (ID) | 5.5 A | 6.5 A | 5.5 A | 6.5 A |
最大漏源导通电阻 | 0.4 Ω | 0.3 Ω | 0.4 Ω | 0.3 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-205 | TO-205 | TO-205 | TO-205 |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
厂商名称 | Vishay(威世) | Vishay(威世) | - | Vishay(威世) |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved