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SMDA12C-5-TR

产品描述Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 5 Element, Silicon, PLASTIC, SO-8
产品类别分立半导体    二极管   
文件大小93KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

SMDA12C-5-TR概述

Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 5 Element, Silicon, PLASTIC, SO-8

SMDA12C-5-TR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码SOD
包装说明R-PDSO-G8
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE
最小击穿电压13.3 V
配置COMMON BIPOLAR TERMINAL, 5 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G8
JESD-609代码e0
最大非重复峰值反向功率耗散300 W
元件数量5
端子数量8
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压12 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax: (480) 947-1503
SMDA03C-5
thru
SMDA24C-5
TVSarray™ Series
DESCRIPTION (300 watt)
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is
packaged in a SO-8 configuration giving protection to 5
Bidirectional data or interface lines. It is designed for use in
applications where protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as
defined in IEC 1000-4-2, electrical fast transients (EFT) per IEC
1000-4-4 and effects of secondary lighting.
These TVS arrays have a peak power rating of 300 watts for an 8/20
µsec
pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS DRAM’s,
SRAM’s, HCMOS, HSIC microprocessors, and I/O transceivers. The SMDAXXC-5 product provides board
level protection from static electricity and other induced voltage surges that can damage sensitive circuitry.
FEATURES
Protects up to 5 Bidirectional lines
Surge protection Per IEC 1000-4-2, 1000-4-4
SO-8 Packaging
MECHANICAL
Molded SO-8 Surface Mount
Weight: 0.066 grams (approximate)
Marking: Logo, device number, date code
Pin #1 defined by DOT on top of package
MAXIMUM RATINGS
Operating Temperatures: -55 C to +150 C
Storage Temperature: -55
0
C to +150
0
C
Peak Pulse Power: 300 Watts (8/20
µsec,
Figure 1)
Pulse Repetition Rate: <.01%
0
0
PACKAGING
Tape & Reel EIA Standard 481-1-A
13 inch reel 2,500, pieces (OPTIONAL)
Carrier tubes 95 pcs per (STANDARD)
ELECTRICAL CHARACTERISTICS PER LINE @ 25
0
C Unless otherwise specified
STAND
OFF
VOLTAGE
V
WM
VOLTS
MAX
SMDA03C-5
SMDA05C-5
SMDA12C-5
SMDA15C-5
SMDA24C-5
SDL5
SDB5
SDD5
SDF5
SDH5
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(FIGURE 2)
VOLTS
MAX
7
9.8
19.0
24.0
43.0
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(FIGURE 2)
VOLTS
MAX
9
11
24
30
55
LEAKAGE
CURRENT
I
D
@ V
WM
µA
MAX
200
40
1
1
1
CAPACITANCE
(f=1 MHz)
@0V
C
pF
TYP
300
200
75
50
35
TEMPERATURE
COEFFICIENT
OF V
BR
á
VBR
mV/°C
MAX
-5
3
10
13
30
PART
NUMBER
DEVICE
MARKING
NOTE:
TVS product is normally selected based on its stand off Voltage V
WM
. Product selected voltage
should be equal to or greater than the continuous peak operating voltage of the circuit to be protected.
Application:
The SMDAXXC-5 product is designed for transient voltage suppression protection of ESD
sensitive components at the board level. It is an ideal product to be used for protection of I/O Transceivers.
MSC0331A.PDF
ISO 9001 CERTIFIED
REV N 7/06/2000

SMDA12C-5-TR相似产品对比

SMDA12C-5-TR SMDA03C-5E3/TR7 SMDA15C-5E3/TR7 SMDA03C-5/TR7 SMDA03C-5E3/TR13 SMDA05C-5E3/TR13 SMDA03C-5-TR SMDA15C-5-TR SMDA05C-5-TR
描述 Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 5 Element, Silicon, PLASTIC, SO-8 tvs diode 3.3vwm 9vc 8soic tvs diode 15vwm 30vc 8soic TVS DIODE 3.3V 9V 8SO TVS DIODE 3.3V 9V 8SO TVS DIODE 5V 11V 8SO Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Bidirectional, 5 Element, Silicon, PLASTIC, SO-8 Trans Voltage Suppressor Diode, 300W, 15V V(RWM), Bidirectional, 5 Element, Silicon, PLASTIC, SO-8 Trans Voltage Suppressor Diode, 300W, 5V V(RWM), Bidirectional, 5 Element, Silicon, PLASTIC, SO-8
是否无铅 含铅 - 不含铅 - 不含铅 - 含铅 含铅 含铅
是否Rohs认证 不符合 - 符合 - 符合 - 不符合 不符合 不符合
厂商名称 Microsemi - Microsemi - Microsemi - Microsemi Microsemi Microsemi
包装说明 R-PDSO-G8 - - - R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Reach Compliance Code compliant - compliant - compliant - compliant compliant compliant
最小击穿电压 13.3 V - - - 4 V - 4 V 16.7 V 6 V
配置 COMMON BIPOLAR TERMINAL, 5 ELEMENTS - - - COMMON BIPOLAR TERMINAL, 5 ELEMENTS - COMMON BIPOLAR TERMINAL, 5 ELEMENTS COMMON BIPOLAR TERMINAL, 5 ELEMENTS COMMON BIPOLAR TERMINAL, 5 ELEMENTS
二极管元件材料 SILICON - - - SILICON - SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G8 - - - R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
最大非重复峰值反向功率耗散 300 W - - - 300 W - 300 W 300 W 300 W
元件数量 5 - - - 5 - 5 5 5
端子数量 8 - - - 8 - 8 8 8
封装主体材料 PLASTIC/EPOXY - - - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - - - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - - - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 BIDIRECTIONAL - - - BIDIRECTIONAL - BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
最大重复峰值反向电压 12 V - - - 3.3 V - 3.3 V 15 V 5 V
表面贴装 YES - - - YES - YES YES YES
技术 AVALANCHE - - - AVALANCHE - AVALANCHE AVALANCHE AVALANCHE
端子形式 GULL WING - - - GULL WING - GULL WING GULL WING GULL WING
端子位置 DUAL - - - DUAL - DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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