Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
| 参数名称 | 属性值 |
| 厂商名称 | Fairchild |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 1.2 A |
| 集电极-发射极最大电压 | 30 V |
| 配置 | DARLINGTON |
| 最小直流电流增益 (hFE) | 10000 |
| JESD-30 代码 | R-PDSO-G4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 125 MHz |
| PZTA13D84Z | MMBTA13D87Z | MPSA13D26Z | MPSA13D75Z | MPSA13J18Z | MPSA13J05Z | MPSA13D74Z | MPSA13D27Z | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown | compliant | compliant | compliant | unknown | unknown | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 厂商名称 | Fairchild | Fairchild | - | Fairchild | Fairchild | Fairchild | Fairchild | Fairchild |
| 最大集电极电流 (IC) | 1.2 A | - | 1.2 A | 1.2 A | 1.2 A | 1.2 A | 1.2 A | 1.2 A |
| 集电极-发射极最大电压 | 30 V | - | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| 配置 | DARLINGTON | - | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON | DARLINGTON |
| 最小直流电流增益 (hFE) | 10000 | - | 10000 | 10000 | 10000 | 10000 | 10000 | 10000 |
| JESD-30 代码 | R-PDSO-G4 | - | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | - | 3 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | SMALL OUTLINE | - | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | NO | NO | NO | NO | NO | NO |
| 端子形式 | GULL WING | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | - | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 125 MHz | - | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 | - | 不符合 | 符合 | 符合 |
| JESD-609代码 | - | - | e3 | e3 | - | e0 | e3 | e3 |
| 最高工作温度 | - | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 端子面层 | - | - | Matte Tin (Sn) | Matte Tin (Sn) | - | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) |
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