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HB56U832SB-8BN: 产品描述EDO DRAM Module, 8MX32, 80ns, MOS, SIMM-72; 产品类别存储存储; 文件大小224KB，共19页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HB56U832SB-8BN概述

EDO DRAM Module, 8MX32, 80ns, MOS, SIMM-72

HB56U832SB-8BN规格参数

参数名称	属性值
厂商名称	Hitachi （Renesas ）
零件包装代码	SIMM
包装说明	SIMM, SSIM72
针数	72
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	FAST PAGE WITH EDO
最长访问时间	80 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON
JESD-30 代码	R-XSMA-N72
内存密度	268435456 bit
内存集成电路类型	EDO DRAM MODULE
内存宽度	32
功能数量	1
端口数量	1
端子数量	72
字数	8388608 words
字数代码	8000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	8MX32
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	SIMM
封装等效代码	SSIM72
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	5 V
认证状态	Not Qualified
刷新周期	2048
座面最大高度	25.4 mm
自我刷新	NO
最大待机电流	0.016 A
最大压摆率	0.76 mA
最大供电电压 (Vsup)	5.25 V
最小供电电压 (Vsup)	4.75 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	MOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	SINGLE

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HB56U832B/SB-6BN/7BN/8BN

8,388,608-word

32-bit High Density Dynamic RAM Module

ADE-203-557(Z)

Preliminary - Rev.0.0

Apr. 02, 1996

Description

The HB56U832 is a 8M

32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

(HM5117405BS) sealed in SOJ package.

An outline of the HB56U832 is 72-pin single in-line package.

The HB56U832 offers Extended Data Out (EDO) Page Mode as a high speed access mode.

Therefore, the HB56U832 makes high density mounting possible without surface mount technology. The

HB56U832 provides common data inputs and outputs.

Decoupling capacitors are mounted beneath each SOJ on the module board.

Features

•

72-pin single in-line package



Lead pitch: 1.27 mm

•

Single 5 V (±5%) supply

•

High speed



Access time: t

RAC

= 60/70/80 ns (max)



Access time: t

CAC

= 15/18/20 ns (max)

•

Low power dissipation



Active mode: 4.83/4.41/3.99 W (max)



Standby mode (TTL): 168 mW (max)



Standby mode (CMOS): 84 mW (max)

•

EDO mode capability

•

2,048 refresh cycle: 32 ms

•

3 variations of refresh



RAS-only

refresh



CAS-before-RAS

refresh



Hidden refresh

•

TTL compatible

Preliminary:

This document contains information on a new product. Specifications and information

contained herein are subject to change without notice.

HB56U832SB-8BN相似产品对比

	HB56U832SB-8BN	HB56U832SB-7BN	HB56U832SB-6BN	HB56U832B-6BN	HB56U832B-8BN	HB56U832B-7BN
描述	EDO DRAM Module, 8MX32, 80ns, MOS, SIMM-72	EDO DRAM Module, 8MX32, 70ns, MOS, SIMM-72	EDO DRAM Module, 8MX32, 60ns, MOS, SIMM-72	EDO DRAM Module, 8MX32, 60ns, MOS, SIMM-72	EDO DRAM Module, 8MX32, 80ns, MOS, SIMM-72	EDO DRAM Module, 8MX32, 70ns, MOS, SIMM-72
零件包装代码	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM
包装说明	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72
针数	72	72	72	72	72	72
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
最长访问时间	80 ns	70 ns	60 ns	60 ns	80 ns	70 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72
内存密度	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
内存集成电路类型	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
内存宽度	32	32	32	32	32	32
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	72	72	72	72	72	72
字数	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
字数代码	8000000	8000000	8000000	8000000	8000000	8000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM
封装等效代码	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	2048	2048	2048	2048	2048	2048
座面最大高度	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm
自我刷新	NO	NO	NO	NO	NO	NO
最大待机电流	0.016 A	0.016 A	0.016 A	0.016 A	0.016 A	0.016 A
最大压摆率	0.76 mA	0.84 mA	0.92 mA	0.92 mA	0.76 mA	0.84 mA
最大供电电压 (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
最小供电电压 (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO
技术	MOS	MOS	MOS	MOS	MOS	MOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
厂商名称	Hitachi （Renesas ）	-	-	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）

HB56U832SB-8BN

HB56U832SB-8BN概述

HB56U832SB-8BN规格参数

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