NDF06N62Z
N-Channel Power MOSFET
620 V, 1.2
W
Features
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Rating
Drain−to−Source Voltage
Continuous Drain Current R
qJC
(Note 1)
Continuous Drain Current
R
qJC
, T
A
= 100°C (Note 1)
Pulsed Drain Current,
V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I
D
= 6.0
A
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H.
≤
30%,
T
A
= 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body Diode)
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
NDF06N62Z
620
6.0
3.8
20
31
±30
113
3000
4500
Unit
V
A
A
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V
DSS
620 V
R
DS(ON)
(MAX) @ 3 A
1.2
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
N−Channel
D (2)
G (1)
A
W
V
mJ
V
V
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
dv/dt
I
S
T
L
T
J
, T
stg
4.5
6.0
260
−55
to 150
V/ns
A
°C
°C
Gate
Source
NDF06N62ZG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
SD
= 6.0 A, di/dt
≤
100 A/ms, V
DD
≤
BV
DSS
, T
J
= +150°C
A
Y
WW
G
Drain
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
ORDERING INFORMATION
Device
NDF06N62ZG
Package
TO−220FP
(Pb−Free,
Halogen−Free)
Shipping
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2011
September, 2011
−
Rev. 1
1
Publication Order Number:
NDF06N62Z/D
NDF06N62Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State (Note 3)
Symbol
R
qJC
R
qJA
NDF06N62Z
4.0
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 620 V, V
GS
= 0 V
V
GS
=
±20
V
V
GS
= 10 V, I
D
= 3.0 A
V
DS
= V
GS
, I
D
= 100
mA
V
DS
= 15 V, I
D
= 3.0 A
25°C
125°C
I
GSS
R
DS(on)
V
GS(th)
g
FS
C
iss
C
oss
C
rss
Q
g
V
DD
= 310 V, I
D
= 6.0 A,
V
GS
= 10 V
Q
gs
Q
gd
V
gp
R
g
t
d(on)
V
DD
= 310 V, I
D
= 6.0 A,
V
GS
= 10 V, R
G
= 5
Ω
t
r
t
d(off)
t
f
3.0
5.0
923
106
23
32
6.3
17
6.3
3.2
13
19
32
28
V
W
ns
nC
0.98
BV
DSS
DBV
DSS
/
DT
J
I
DSS
620
0.6
1
50
±10
1.2
4.5
mA
W
V
S
pF
V
V/°C
mA
Test Conditions
Symbol
Min
Typ
Max
Unit
Gate−to−Source Forward Leakage
ON CHARACTERISTICS
(Note 4)
Static Drain−to−Source
On−Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
3. Insertion mounted
4. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
I
S
= 6.0 A, V
GS
= 0 V
V
GS
= 0 V, V
DD
= 30 V
I
S
= 6.0 A, di/dt = 100 A/ms
V
SD
t
rr
Q
rr
338
2.0
1.6
V
ns
mC
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2
NDF06N62Z
TYPICAL CHARACTERISTICS
12
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
10
8
6
4
2
0
15 V
10 V
12
V
DS
≥
30 V
I
D
, DRAIN CURRENT (A)
10
8
6
4
2
0
T
J
=
−55°C
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 150°C
T
J
= 25°C
7V
6.8 V
6.6 V
6.4 V
6.2 V
6.0 V
5.8 V
5.6 V
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2
I
D
= 3 A
T
J
= 25°C
1.5
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
1.75
Figure 2. Transfer Characteristics
T
J
= 25°C
1.5
1.25
V
GS
= 10 V
1
0.75
0.5
1
0.5
0
5
6
7
V
GS
(V)
8
9
10
0
2
4
6
8
10
12
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
2.6
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
2.2
1.8
1.4
1.0
0.6
0.2
−50
I
D
= 3 A
V
GS
= 10 V
BV
DSS
, NORMALIZED BREAKDOWN
VOLTAGE (V)
1.15
1.1
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 1 mA
1.05
1.0
0.95
0.9
−50
−25
0
25
50
75
100
125
150
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BVDSS Variation with Temperature
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3
NDF06N62Z
TYPICAL CHARACTERISTICS
100
V
GS
= 0 V
I
DSS
, LEAKAGE (mA)
T
J
= 150°C
C, CAPACITANCE (pF)
10
1500
2000
V
GS
= 0 V
T
J
= 25°C
1
1000
C
iss
0.1
T
J
= 100°C
500
C
oss
C
rss
0.01
0
100
200
300
400
500
600
0
0
50
100
150
200
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
vs. Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
20
QT
V
DS
200
Qgs
5
Qgd
V
GS
V
DS
= 310V
T
J
= 25°C
I
D
= 6 A
0
5
10
15
20
25
30
100
400
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
15
300
V
DD
= 310 V
I
D
= 6 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
r
t
f
t
d(on)
10
10
0
0
35
1
1
10
R
G
, GATE RESISTANCE (W)
100
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
6
I
S
, SOURCE CURRENT (A)
5
4
3
2
1
0
0.4
V
GS
= 0 V
T
J
= 25°C
100
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
I
D
, DRAIN CURRENT (A)
10
dc
1
10 ms 1 ms
100
ms
10
ms
0.1
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
1000
0.5
0.6
0.7
0.8
0.9
1.0
0.01
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDF06N62Z
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4
NDF06N62Z
TYPICAL CHARACTERISTICS
10
1.0
R(t) (C/W)
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.1
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
R
qJC
= 4.0°C/W
Steady State
Figure 13. Thermal Impedance for NDF06N62Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
stm32/stm8
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