NCV8403A, NCV8403B
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
NCV8403A/B is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
V
DSS
(Clamped)
42 V
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I
D
MAX
(Limited)
15 A
Drain
Overvoltage
Protection
R
DS(on)
TYP
53 mW @ 10 V
•
•
•
•
•
•
•
•
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Gate
Input
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
•
Switch a Variety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
4
1
2
3
MARKING
DIAGRAM
DRAIN
4
AYW
xxxxxG
G
1
2
3
SOURCE
GATE
DRAIN
YWW
xxxxxG
SOT−223
CASE 318E
STYLE 3
4
1 2
3
DPAK
CASE 369C
A
= Assembly Location
Y
= Year
W, WW = Work Week
xxxxx = V8403A or V8403B
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
October, 2018
−
Rev. 10
1
Publication Order Number:
NCV8403/D
NCV8403A, NCV8403B
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Continuous
Total Power Dissipation
−
SOT−223 Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
Total Power Dissipation
−
DPAK Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
Thermal Resistance
−
SOT−223 Version
Junction−to−Soldering Point
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Thermal Resistance
−
DPAK Version
Junction−to−Soldering Point
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Inductive Load Switching Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 V, I
L
= 2.8 A, L = 120 mH, R
G
= 25
W)
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0
W,
R
L
= 4.5
W,
t
d
= 400 ms)
Operating Junction Temperature
Storage Temperature
Symbol
V
DSS
V
GS
I
D
P
D
Value
42
"14
Unit
Vdc
Vdc
W
Internally Limited
1.13
1.56
1.32
2.5
R
qJS
R
qJA
R
qJA
R
qJS
R
qJA
R
qJA
E
AS
V
LD
T
J
T
stg
12
110
80
2.5
95
50
470
55
−40
to 150
−55
to 150
°C/W
mJ
V
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
+
I
D
DRAIN
I
G
+
GATE
VDS
VGS
SOURCE
−
−
Figure 1. Voltage and Current Convention
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2
NCV8403A, NCV8403B
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
(V
GS
= 0 Vdc, I
D
= 250
mAdc,
T
J
=
−40°C
to 150°C) (Note 3)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150°C) (Note 3)
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C) (Note 3)
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 25°C)
(V
GS
= 5.0 Vdc, I
D
= 3.0 Adc, T
J
@ 150°C) (Note 3)
Source−Drain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
SWITCHING CHARACTERISTICS
(Note 3)
Turn−ON Time (10% V
IN
to 90% I
D
)
Turn−OFF Time (90% V
IN
to 10% I
D
)
Turn−ON Time (10% V
IN
to 90% I
D
)
Turn−OFF Time (90% V
IN
to 10% I
D
)
Slew−Rate ON (20% V
DS
to 50% V
DS
)
Slew−Rate OFF (80% V
DS
to 50% V
DS
)
Current Limit
Current Limit
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS
(Note 3)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
V
GS
= 10 V I
D
= 1.0 A
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 3)
Electro−Static Discharge Capability
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
ESD
4000
400
−
−
−
−
V
V
I
GTL
I
GCL
I
GON
50
400
0.1
0.6
0.45
1.5
mA
mA
mA
V
IN
= 0 V to 5 V, V
DD
= 25 V
I
D
= 1.0 A, Ext R
G
= 2.5
W
V
IN
= 0 V to 10 V, V
DD
= 25 V
,
I
D
= 1.0 A, Ext R
G
= 2.5
W
V
in
= 0 to 10 V, V
DD
= 12 V,
R
L
= 4.7
W
t
ON
t
OFF
t
ON
t
OFF
−dV
DS
/dt
ON
dV
DS
/dt
OFF
I
LIM
I
LIM
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
10
5.0
12
8.0
150
−
150
−
44
84
15
116
2.43
0.83
15
10
17
13
175
15
165
15
20
15
22
18
200
−
185
−
Adc
Adc
°C
°C
°C
°C
V/ms
ms
V
GS(th)
1.0
−
−
−
−
−
−
1.7
5.0
53
95
63
105
0.95
2.2
−
68
123
76
135
1.1
Vdc
mV/°C
mW
V
(BR)DSS
42
40
−
−
−
46
45
0.6
2.5
50
51
51
5.0
−
125
Vdc
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
mAdc
R
DS(on)
R
DS(on)
mW
V
SD
V
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 5)
V
GS
= 5.0 V, V
DS
= 10 V
V
GS
= 5.0 V, T
J
= 150°C (Note 3)
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 10 V, T
J
= 150°C (Note 3)
V
GS
= 5.0 Vdc (Note 3)
V
GS
= 5.0 Vdc
V
GS
= 10 Vdc (Note 3)
V
GS
= 10 Vdc
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
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3
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
10
1000
T
Jstart
= 150°C
Emax (mJ)
ILmax (A)
T
Jstart
= 25°C
T
Jstart
= 25°C
T
Jstart
= 150°C
1
10
L (mH)
100
100
10
L (mH)
100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
100
1000
Figure 3. Single−Pulse Maximum Switching
Energy vs. Load Inductance
10
T
Jstart
= 25°C
Emax (mJ)
ILmax (A)
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 150°C
1
1
TIME IN CLAMP (ms)
10
100
1
TIME IN CLAMP (ms)
10
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
25
20
15
10
5
0
T
a
= 25°C
3V
5
V
GS
= 2.5 V
0
1
2
V
DS
(V)
3
4
5
0
1.0
6V
7V
8V
9V
10 V
15
5V
4V
20
Figure 5. Single−Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
V
DS
= 10 V
−40°C
25°C
I
D
(A)
I
D
(A)
10
100°C
150°C
1.5
2.0
2.5
V
GS
(V)
3.0
3.5
4.0
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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4
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
150
125
R
DS(on)
(mW)
100
100°C
75
25°C
50
−40°C
25
3
4
5
6
7
8
9
10
150°C
I
D
= 3 A
100
90
80
R
DS(on)
(mW)
70
60
50
40
30
20
1
2
3
4
5
I
D
(A)
6
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
−40°C,
V
GS
= 5 V
−40°C,
V
GS
= 10 V
7
9
8
10
150°C, V
GS
= 5 V
150°C, V
GS
= 10 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
V
GS
(V)
Figure 8. R
DS(on)
vs. Gate−Source Voltage
Figure 9. R
DS(on)
vs. Drain Current
2.00
I
D
= 5 A
1.75
NORMALIZED R
DS(on)
25
−40°C
20
1.50
1.25
1.00
0.75
0.50
−40 −20
V
GS
= 10 V
10
I
LIM
(A)
15
25°C
V
GS
= 5 V
100°C
150°C
V
DS
= 10 V
0
20
40
60
T (°C)
80
100
120
140
5
5
6
7
V
GS
(V)
8
9
10
Figure 10. Normalized R
DS(on)
vs. Temperature
25
V
GS
= 10 V
20
I
DSS
(mA)
I
LIM
(A)
V
GS
= 5 V
15
V
DS
= 10 V
Figure 11. Current Limit vs. Gate−Source
Voltage
100
10
1
0.1
0.01
150°C
V
GS
= 0 V
100°C
25°C
−40°C
10
0.001
0.0001
5
−40 −20
0
20
40
60
80
100
120
140
0.00001
10
15
20
25
V
DS
(V)
30
35
40
T
J
(°C)
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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