NCV8402, NCV8402A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8402/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
Features
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V
(BR)DSS
(Clamped)
42 V
R
DS(ON)
TYP
165 mW @ 10 V
I
D
MAX
2.0 A*
•
•
•
•
•
•
•
•
•
Short−Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
NCV8402AMNWT1G − Wettable Flanks Product
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
*Max current limit value is dependent on input
condition.
MARKING DIAGRAMS
DRAIN
4
1
2
4
SOT−223
CASE 318E
STYLE 3
AYW
xxxxx
G
G
1
2
3
SOURCE
GATE
DRAIN
1
1
DFN6
CASE 506AX
xxxxx
AYWW
G
3
•
Switch a Variety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
Drain
Overvoltage
Protection
DFN6 (WF)
CASE 506DK
1
1
xxxxx
AYWW
G
Gate
Input
A
= Assembly Location
Y
= Year
W or WW = Work Week
xxxxx = V8402 or 8402A
G
= Pb−Free Package
(Note: Microdot may be in either location)
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
DFN6 PACKAGE PIN DESCRIPTION
G NC NC
1 2 3
7
EPAD
Source
6
S
5
S
4
S
Pin #
1
2
3
4
5
6
7
Symbol
G
NC
NC
S*
S*
S*
EPAD
Description
Gate Input
No Connect
No Connect
Source
Source
Source
Drain
*Pins 4, 5, 6 are internally shorted together.
It is recommended to short these pins externally.
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
September, 2018 − Rev. 24
Publication Order Number:
NCV8402/D
NCV8402, NCV8402A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
Continuous Drain Current
Total Power Dissipation − SOT−223 Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C)
(R
G
= 1.0 MW)
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
Value
42
42
"14
Unit
V
V
V
Internally Limited
1.1
1.7
8.9
0.76
1.7
8.9
2.37
2.98
6.75
1.98
3.02
6.75
114
72
14
163
70
14
150
55
−40 to 150
−55 to 150
mJ
V
°C
°C
W
Total Power Dissipation − DFN Version
P
D
W
Maximum Continuous Drain Current − SOT−223 Version
I
D
A
Maximum Continuous Drain Current − DFN Version
I
D
A
Thermal Resistance
SOT223 Junction−to−Ambient Steady State (Note 1)
SOT223 Junction−to−Ambient Steady State (Note 2)
SOT223 Junction−to−Soldering Point Steady State
DFN Junction−to−Ambient Steady State (Note 1)
DFN Junction−to−Ambient Steady State (Note 2)
DFN Junction−to−Soldering Point Steady State
R
qJA
R
qJA
R
qJS
R
qJA
R
qJA
R
qJS
E
AS
V
LD
T
J
T
stg
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A, L = 300 mH, R
G(ext)
= 25
W)
Load Dump Voltage
Operating Junction Temperature
Storage Temperature
(V
GS
= 0 and 10 V, R
I
= 2.0
W,
R
L
= 9.0
W,
t
d
= 400 ms)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
I
D
DRAIN
I
G
+
GATE
VDS
VGS
SOURCE
−
−
Figure 1. Voltage and Current Convention
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NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
(Note 5)
V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C
V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C
(Note 5)
V
DS
= 0 V, V
GS
= 5.0 V
V
GS
= V
DS
, I
D
= 150
mA
I
DSS
I
DSS
I
GSSF
V
(BR)DSS
42
40
46
45
0.25
1.1
50
55
55
4.0
20
100
mA
mA
mA
V
Test Condition
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate Input Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance
V
GS(th)
V
GS(th)
/T
J
1.3
1.8
4.0
165
305
195
360
190
350
2.2
V
−mV/°C
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 25°C
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 25°C
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 25°C
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 150°C
(Note 5)
R
DS(on)
200
400
230
460
230
460
mW
Source−Drain Forward On Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time (10% V
IN
to 10% I
D
)
Turn−On Rise Time (10% I
D
to 90% I
D
)
Turn−Off Delay Time (90% V
IN
to 90% I
D
)
Turn−Off Fall Time (90% I
D
to 10% I
D
)
Slew−Rate ON (70% to 50% V
DD
)
Slew−Rate OFF (50% to 70% V
DD
)
V
GS
= 0 V, I
S
= 7.0 A
V
SD
1.0
V
td
(on)
t
rise
V
GS
= 10 V, V
DD
= 12 V,
I
D
= 2.5 A, R
L
= 4.7
W
td
(off)
t
fall
−dV
DS
/dt
ON
dV
DS
/dt
OFF
25
120
20
50
0.8
0.3
30
200
25
70
1.2
0.5
ms
ms
ms
ms
V/ms
V/ms
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 4)
Current Limit
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 150°C
(Note 5)
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C
V
DS
= 10 V, V
GS
= 10 V, T
J
= 150°C
(Note 5)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS
(Note 5)
Device ON Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
V
GS
= 10 V I
D
= 1.0 A
Current Limit Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
I
GCL
I
GON
50
400
0.05
0.4
mA
mA
V
GS
= 5.0 V (Note 5)
V
GS
= 5.0 V
V
GS
= 10 V (Note 5)
V
GS
= 10 V
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
150
I
LIM
3.7
2.3
4.2
2.7
150
4.3
3.0
4.8
3.6
175
15
165
15
185
5.0
3.7
5.4
4.5
200
°C
A
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NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
GATE INPUT CHARACTERISTICS
(Note 5)
Thermal Limit Fault Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
V
I
GTL
0.15
0.7
mA
Test Condition
Symbol
Min
Typ
Max
Unit
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
10
1000
E
max
(mJ)
I
L(max)
(A)
T
Jstart
= 25°C
100
T
Jstart
= 25°C
T
Jstart
= 150°C
1
10
L (mH)
10
10
T
Jstart
= 150°C
100
100
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
10
1000
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
T
Jstart
= 25°C
E
max
(mJ)
I
L(max)
(A)
T
Jstart
= 25°C
100
T
Jstart
= 150°C
1
T
Jstart
= 150°C
0.1
1
TIME IN CLAMP (ms)
10
10
1
TIME IN CLAMP (ms)
10
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
8
7
6
5V
5
I
D
(A)
4
3
2
1
0
0
1
2
V
DS
(V)
3
3V
4V
T
A
= 25°C
8V
10 V
6V
5
V
DS
= 10 V
4
25°C
100°C
3
3.5 V
I
D
(A)
150°C
2
−40°C
1
V
GS
= 2.5 V
0
4
5
1
2
3
V
GS
(V)
4
5
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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