NCV7703B
Triple Half-Bridge Driver
with SPI Control
The NCV7703B is a fully protected Triple Half−Bridge Driver
designed specifically for automotive and industrial motion control
applications. The three half−bridge drivers have independent control.
This allows for high side, low side, and H−Bridge control. H−Bridge
control provides forward, reverse, brake, and high impedance states.
The drivers are controlled via a standard Serial Peripheral Interface
(SPI). This device is fully compatible with ON Semiconductor’s
NCV7708 Double Hex Driver.
Features
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MARKING
DIAGRAM
14
14
1
SOIC−14
D2 SUFFIX
CASE 751A
1
NCV7703B = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
G
= Pb−Free Package
NCV7703BG
AWLYWW
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Ultra Low Quiescent Current in Sleep Mode, 1
mA
for V
S
and V
CC
Power Supply Voltage Operation down to 5 V
3 High−Side and 3 Low−Side Drivers Connected as Half−Bridges
Internal Free−Wheeling Diodes
Configurable as H−Bridge Drivers
0.5 A Continuous (1 A peak) Current
R
DS(on)
= 0.8
W
(typ)
5 MHz SPI Control with Daisy Chain Capability
Compliance with 5 V and 3.3 V Systems
Overvoltage and Undervoltage Lockout
Fault Reporting
1.4 A Overcurrent Threshold Detection with Optional Shutdown
3 A Current Limit with Auto Shutdown
Overtemperature Warning and Protection Levels
Internally Fused Leads in SOIC−14 Package for Better Thermal
Performance
•
ESD Protection up to 6 kV
•
These are Pb−Free Devices
Typical Applications
PIN CONNECTIONS
GND
OUT3
V
S
CSB
SI
SCLK
GND
GND
OUT1
OUT2
V
CC
EN
SO
GND
ORDERING INFORMATION
•
Automotive
•
Industrial
•
DC Motor Management
V
S
V
S
V
S
Device
NCV7703BD2G
Package
SOIC−14
(Pb−Free)
SOIC−14
(Pb−Free)
Shipping†
55 Units / Rail
NCV7703BD2R2G
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M
OUT1
OUT2
M
OUT3
Figure 1. Cascaded Application
©
Semiconductor Components Industries, LLC, 2017
1
March, 2017 − Rev. 4
Publication Order Number:
NCV7703B/D
NCV7703B
V
S
DRIVE 1
EN
ENABLE
OSC
clk
V
S
clk
Charge
Pump
Control
Logic
V
S
High−Side
Driver
Waveshaping
V
S
Low−Side
Driver
OUT1
V
CC
UVLO
Reference
& Bias
Fault
Detect
Channel Enable
SO
16 Bit
Logic
and
Latch
Fault
Waveshaping
SI
SPI
SCLK
Under−Load
Overcurrent
Thermal
Warning/Shutdown
CSB
V
S
DRIVE 2
clk
Channel Enable
Fault
V
S
Undervoltage
Lockout
V
S
DRIVE 3
clk
Channel Enable
Fault
OUT2
OUT3
V
S
Overvoltage
Lockout
GND
Figure 2. Block Diagram
PACKAGE PIN DESCRIPTION
Pin #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Symbol
GND*
OUT3
V
S
CSB
SI
SCLK
GND*
GND*
SO
EN
V
CC
OUT2
OUT1
GND*
Ground. Connect all grounds together.
Half Bridge Output 3.
Power Supply input for the output drivers and internal supply voltage.
Chip Select Bar. Active low serial port operation.
Serial Input
Serial Clock
Ground. Connect all grounds together.
Ground. Connect all grounds together.
Serial Output
Enable. Logic high wakes the IC up from a sleep mode.
Power supply input for internal logic.
Half Bridge Output 2.
Half Bridge Output 1.
Ground. Connect all grounds together.
Description
*Pins 1, 7, 8, and 14 are internally shorted together. It is recommended to also short these pins externally.
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2
NCV7703B
ENABLE
WDI
D1*
1N4001
+
VBAT
−
10
mF
M
OUT2
CSB
SI
SCLK
SO
OUT3
M
Wake Up
RESET
Vout
D2**
22
mF
Delay
120k
GND
NCV8518
V
CC
EN
V
S
OUT1
microprocessor
NCV7703B
GND
GND
GND
GND
GND
* D1 optional. For use where reverse battery protection is required.
** D2 optional. For use where load dump exceeds 40V.
Figure 3. Application Circuit
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NCV7703B
MAXIMUM RATINGS
Rating
Power Supply Voltage (V
S
)
(DC)
(AC), t < 500 ms, Ivs > −2 A
Output Pin OUTx
(DC)
(AC), t < 500 ms, IOUTx > −2 A
Pin Voltage
(Logic Input pins, SI, SCLK, CSB, SO, EN, V
CC
)
Output Current (OUTx)
(DC)
(AC) (50 ms pulse, 1 s period)
Electrostatic Discharge, Human Body Model,
V
S
, OUT1, OUT2, OUT3 (Note 3)
Electrostatic Discharge, Human Body Model,
all other pins (Note 3)
Electrostatic Discharge, Machine Model,
V
S
, OUT1, OUT2, OUT3 (Note 3)
Electrostatic Discharge, Machine Model,
all other pins (Note 3)
Operating Junction Temperature
Storage Temperature Range
Moisture Sensitivity Level (MAX 260°C Processing)
Value
−0.3 to 40
−1
V
−0.3 to 40
−1
−0.3 to 7
V
A
−1.8 to 1.8
Internally Limited
6
2
300
200
−40 to 150
−55 to 150
MSL3
kV
kV
V
V
°C
°C
−
Unit
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Thermal Parameters
14 Pin Fused SOIC Package
Junction−to−Lead (psi−JL8,
Y
JL8
) or Pins 1, 7, 8, 14
Junction−to−Ambient (R
qJA
,
q
JA
)
Test Conditions (Typical Value)
min−pad board
(Note 1)
23
122
1″ pad board
(Note 2)
22
83
°C/W
°C/W
Unit
1. 1−oz copper, 67 mm
2
copper area, 0.062″ thick FR4.
2. 1−oz copper, 645 mm
2
copper area, 0.062″ thick FR4.
3. This device series incorporates ESD protection and is characterized by the following methods:
ESD HBM according to AEC−Q100−002 (EIA/JESD22−A114)
ESD MM according to AEC−Q100−003 (EIA/JESD22−A115)
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4
NCV7703B
ELECTRICAL CHARACTERISTICS
(−40°C
≤
T
J
≤
150°C, 5.5 V
≤
V
S
≤
40 V, 3 V
≤
V
CC
≤
5.25 V, EN = V
CC
, unless otherwise specified)
Characteristic
GENERAL
Supply Current (V
S
)
Sleep Mode (Note 5)
V
S
= 13.2 V, OUTx = 0 V
EN = SI = SCLK = 0 V, CSB = V
CC
0 V < V
CC
< 5.25 V
(T
J
= −40°C to 85°C)
V
S
= 13.2 V, OUTx = 0 V
EN = SI = SCLK = 0 V, CSB = V
CC
0 V < V
CC
< 5.25 V, T
J
= 25°C
Supply Current (V
S
)
Active Mode
Supply Current (V
CC
)
Sleep Mode (Note 6)
Supply Current (V
CC
)
Active Mode
V
CC
Power−On−Reset Threshold
V
S
Undervoltage Detection
V
S
Overvoltage Detection
Thermal Warning (Note 4)
Thermal Shutdown (Note 4)
Threshold V
S
decreasing
Hysteresis
Threshold V
S
increasing
Hysteresis
Threshold
Hysteresis
Threshold
Hysteresis
EN = V
CC
, 5.5 V < V
S
< 35 V
No Load
V
CC
= CSB, EN = SI = SCLK = 0 V
(T
J
= −40°C to 85°C)
EN = V
CC
−
1.0
5.0
mA
Conditions
Min
Typ
Max
Unit
−
−
2.0
−
−
−
2.60
4.3
100
34.0
1.5
120
−
155
−
1.05
2.0
0
1.5
2.80
4.7
−
37.5
3.5
145
30
175
30
1.20
4.0
2.5
3.0
3.00
5.1
400
40.0
5.5
170
−
195
−
−
mA
mA
mA
V
V
mV
V
°C
°C
°C/°C
Ratio of Thermal Shutdown to Thermal
Warning temperature (Note 4)
OUTPUTS
Output R
DS(on)
(Source)
I
out
= −500 mA
V
S
= 13.2 V, T
J
= 25°C
V
S
= 13.2 V
8 V
≤
V
S
≤
40 V
5.5 V
≤
V
S
≤
8 V, T
J
= 25°C
5.5 V
≤
V
S
≤
8 V
Output R
DS(on)
(Sink)
I
out
= 500 mA
V
S
= 13.2 V, T
J
= 25°C
V
S
= 13.2 V
8 V
≤
V
S
≤
40 V
5.5 V
≤
V
S
≤
8 V, T
J
= 25°C
5.5 V
≤
V
S
≤
8 V
−
−
−
−
−
0.8
−
−
1.3
−
0.95
1.5
1.7
−
2.0
W
W
W
W
W
−
−
−
−
−
0.8
−
−
1.3
−
0.95
1.5
1.7
−
2.0
W
W
W
W
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Thermal characteristics are not subject to production test
5. For temperatures above 85°C, refer to Figure 4.
6. For temperatures above 85°C, refer to Figure 5.
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