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SI9953DYD84Z

产品描述Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
产品类别分立半导体    晶体管   
文件大小427KB,共6页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 选型对比 全文预览

SI9953DYD84Z概述

Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SI9953DYD84Z规格参数

参数名称属性值
厂商名称Fairchild
零件包装代码SOT
包装说明SMALL OUTLINE, R-PDSO-G8
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压20 V
最大漏极电流 (ID)2.3 A
最大漏源导通电阻0.25 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PDSO-G8
元件数量2
端子数量8
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型P-CHANNEL
最大脉冲漏极电流 (IDM)10 A
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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Si9953DY
June 1999
Si9953DY*
Dual P-Channel Enhancement Mode MOSFET
General Description
These P-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize on-
state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
•
•
•
-2.3 A, -20 V. R
DS(on)
=
0.250 Ω
@ V
GS
= -10 V
R
DS(on)
=
0.400 Ω
@ V
GS
= -4.5 V.
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
•
Battery switch
•
Load switch
•
Motor controls
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©1999
Fairchild Semiconductor Corporation
Si9953DY Rev. A

SI9953DYD84Z相似产品对比

SI9953DYD84Z SI9953DYL86Z SI9953DYF011
描述 Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
厂商名称 Fairchild Fairchild Fairchild
零件包装代码 SOT SOT SOT
包装说明 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
针数 8 8 8
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压 20 V 20 V 20 V
最大漏极电流 (ID) 2.3 A 2.3 A 2.3 A
最大漏源导通电阻 0.25 Ω 0.25 Ω 0.25 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
元件数量 2 2 2
端子数量 8 8 8
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 P-CHANNEL P-CHANNEL P-CHANNEL
最大脉冲漏极电流 (IDM) 10 A 10 A 10 A
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON

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